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- Soft Breakdown Mechanism and Modeling in Ultra Thin Gate Oxide 超薄栅氧化层中的软击穿的击穿机理和击穿模型
- TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor,and a method of precise measurement and characterization the trap density and accumulative failure are presented. 采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验,提出了精确测量和表征陷阱密度及累积失效率的方法。
- Charge to Breakdown of Thin Gate Oxides 薄栅氧化层相关击穿电荷
- STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE MOS结构中薄栅氧化层高场退火效应的研究
- Lifetime Assessment of Thin Gate Oxides by Voltage Ramp TDDB Test 薄栅氧化层斜坡电压TDDB寿命评价
- ultra - thin gate oxide 超薄栅氧化
- thin gate oxide 薄栅氧化层
- Abstract： The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma. 摘 要： 采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
- This voltage creates a field across the gate oxide, which causes the adjacent P substrate to invert to N-type. 这一电压在栅极氧化物层上产生一个电场，它导致毗邻的P型衬底转变成N型。
- At the sub 90nm technology node, the gate oxide thickness is expected to be 12-15 Angstrom. 当半导体结点技术发展到小于90纳米时,栅氧化层厚度将减薄至12到15埃。
- With Keithley S900 and TEL-P8 test system, it is applied in the evaluation of gate oxide lifetime of 0.13um process. 本文就已有的测试项目TDDB，根据国外前沿的研究结果，提出了一些新的测试方案，并在C语言的环境下实现算法，结合Keithley S900和TEL-P8测试系统，用于测试0.;13um工艺的栅氧化层寿命。
- In this thesis, we are going to discuss the characteristics of DPN nitrided gate oxide. 因此本论文将讨论去耦电浆氮化闸极氧化层之元件特性。
- To obtain high performance and low power device, gate oxide thickness shrinkage is a main stream in modern ULSI industry. 摘要:为了达到高性能和低电压之元件，减少闸极氧化层厚度是现代超大型积体电路工业的一个主流。
- Furthermore, N ion-implantation that is used in ultra-thin gate oxide parts and in restraining the diffusion of doped impurity is also described. 介绍了氮离子注入在制备超薄氧化栅极及其抑制掺杂杂质原子特别是硼原子扩散等方面的研究和应用。
- The effects of Ge distributing, thickness of super thin gate electric (SiO2 ) and Si cap layer thickness in GeSi channel on GeSi-PMODMOS characteristic,on the basics of analyz- ing PMODMOS structure and device physics are analyzed. 在分析PMODMOS结构以及器件物理基础上，重点研究了GeSi沟道中Ge含量分布、超薄栅介质层SiO2和引帽层厚度等对GeSi－PMODMOS特性的影响。
- The problem is that the gate oxide, which in modern chips is just several atoms thick, is becoming too slim to lay down reliably. 问题是，现代晶片中的闸极氧化层厚度只有几个原子，已经薄到不容易确实放置在晶圆上的地步。
- The most important defect in large size ingots is void, which can degrade the gate oxide integrity (GOI), so as to affect the yields and stability of devices and 1C. 大直径硅单晶、硅片中的最重要的缺陷之一是VOID，它会严重影响硅器件、集成电路的生产成品率和性能稳定性。
- Chapter 1 is an introduction of DPN nitrided gate oxide experiment. The process flow design, device structure and measurement tool are also introduced to realize this experiment. 第一章将针对使用去耦电浆氮化闸极氧化层之背景以及实验规划做个简介，包含元件的制程内容、元件结构及量测仪器，以注明本实验之过程。
- The discussion and analysis of RF reliabilities in this thesis included the hot-carrier damage and the critical gate oxide breakdown of MOS transistors. 而本论文中，对于金氧半场效电晶体的可靠度的讨论则是包含了热载子伤害以及闸极氧化层的崩溃。
- The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law. Idsat的退化可以用函数栅电流 ( Ig)乘以注入的栅氧化层电荷数 ( Qinj)的幂函数表达 .
