The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law.

 
  • Idsat的退化可以用函数栅电流 ( Ig)乘以注入的栅氧化层电荷数 ( Qinj)的幂函数表达 .
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