The effects of Ge distributing, thickness of super thin gate electric (SiO2 ) and Si cap layer thickness in GeSi channel on GeSi-PMODMOS characteristic,on the basics of analyz- ing PMODMOS structure and device physics are analyzed.

• 在分析PMODMOS结构以及器件物理基础上，重点研究了GeSi沟道中Ge含量分布、超薄栅介质层SiO2和引帽层厚度等对GeSi－PMODMOS特性的影响。