The most important defect in large size ingots is void, which can degrade the gate oxide integrity (GOI), so as to affect the yields and stability of devices and 1C.

 
  • 大直径硅单晶、硅片中的最重要的缺陷之一是VOID,它会严重影响硅器件、集成电路的生产成品率和性能稳定性。
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