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- The investigation of Ar ion irradiation to the surface of GaAs substrate[J]. 引用该论文 刘斌;方高瞻;张敬明;马骁宇;肖建伟.
- Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique. 在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。
- For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement. 对红色发光二极体(LED)而言，由于晶格常数之要求，通常将发光材料磷化铝铟镓成长于砷化镓基板上。
- The external quantum efficiency of(A1xGa1-x)0.5In0.5P light emitting diodes (LED) grown on GaAs substrate by lattice matching is limited by the absorptivity of the GaAs substrate. (Al_xGa_(1-x))_(0.;5)In_(0
- Study of RTD Grown on GaAs Substrate GaAs基共振隧穿二极管的研究
- Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J]. 引用该论文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
- On the growth of GaAsSb/GaAs quantum wells, GaAsSb/GaAs quantum wells were grown on GaAs substrates. 在锑砷化镓/砷化镓量子井的成长方面，尝试在砷化镓基板上成长锑砷化镓/砷化镓量子井。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
- The investigation of Ar ion irradiation to the surface of GaAs substrate 对GaAs衬底表面进行氩离子清洗的研究
- A p-buried GaAs MESFET (PB-GaAs MESFET) has been fabricated by means of im-planting Be into semi-insulating GaAs substrates to form a p-type buried layer under the chan-nel active layer. 本文采用在半绝缘GaAs衬底中离子注入Be;于沟道有源层下引入P型埋层技术;制成P埋层GaAs MESPET(PB-GaAs MESFET).
- Effects of GaAs Substrate Nitridation with N_2-H_2 Plasma on c-GaN Epitaxy Growth by ECR-PEMOCVD 用N_2-H_2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响(英文)
- A Broad Contact BH Laser for Monolithic Integration Fabricated on SI- GaAs Substrate SI-GaAs衬底上适于单片集成的宽接触BH激光器
- The Vapour Phase Growth of ZnSe Heteroepitaxy Thin Film on Ge and GaAs Substrate 在Ge和GaAs衬底上气相生长Znse异质结外延膜
- Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_(0.5)ln_(0.5)P epilayer grown on GaAs substrate by MOCVD method MOCVD法生长Ca_(0.;5)In_(0
- The experimental results showed that firstly, the distribution of resistiveity, mobility, Carrier concentration , EPD and AB-EPD in GaAs substrate was not uniform; 实验结果表明，LEC SI-GaAs的电阻率、迁移率、载流子浓度、位错密度和AB微缺陷分布都不是均匀的，且电参数的分布与AB-EPD、位错密度分布有关。
- Any of certain other wetland areas, such as a fen, having a peat substrate. 沼泽地区任一种其它的湿地，有泥炭底面，如沼泽
- The substrate is first covered by a mask. 首先在基片上覆盖一个掩膜片。
- Good adhesion to steel substrate. 与金属底材具有很好的附着力。
- Substrate: Any material used for printing. 承印物料:作印刷用的任何物料。
- Q: Does dry ice blasting cool the substrate? 问题:干冰喷射是否会冷却基体?
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