The experimental results showed that firstly, the distribution of resistiveity, mobility, Carrier concentration , EPD and AB-EPD in GaAs substrate was not uniform;

• 实验结果表明，LEC SI-GaAs的电阻率、迁移率、载流子浓度、位错密度和AB微缺陷分布都不是均匀的，且电参数的分布与AB-EPD、位错密度分布有关。