A p-buried GaAs MESFET (PB-GaAs MESFET) has been fabricated by means of im-planting Be into semi-insulating GaAs substrates to form a p-type buried layer under the chan-nel active layer.是什么意思_A p-buried GaAs MESFET (PB-GaAs MESFET) has been fabricated by means of im-planting Be into semi-insulating GaAs substrates to form a p-type buried layer under the chan-nel active layer.在线翻译_英语_读音_用法_例句