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- A dry etch technology for poly-silicon using Cl2, SF6 and N2 mixed gas has been developed on Tegal 1512e. Different effects of positive resist mask for LDD and SiO2 mask for SST on the process are discussed. 在Tegal1512e设备上,采用Cl_2、SF_6、N_2混合气体,开发了多晶硅干法腐蚀工艺,讨论了LDD的正胶掩膜及SST的SiO_2掩膜对工艺的不同影响。
- A Dry Etch Technology for SiO2 Sidewall in LDD and SST Device Structures 用于LDD和SST的SiO_2边墙干法腐蚀工艺研究
- dry etching technology 干蚀刻技术
- The principle and the main parameters of the dry etching for silicon dioxide are introduced. 摘要阐述了二氧化矽干法蚀刻的原理和主要的蚀刻参数。
- To approach as a resist in dry etching processing, etching properties of the films in oxygen plasma have been investigated. 为了探索该种薄膜在干刻蚀工艺过程中用作掩膜的可能性，还研究了它在氧离子体中的刻蚀性能。
- With the principles and processes of photolithography,dry etching and wet etching,the fabrication of the head slider were experimented. 然后利用光刻、湿法刻蚀和干法刻蚀的工艺及设备,分别进行了该磁头滑块结构的湿法和干法刻蚀试验,给出了刻蚀参数及所加工的磁头照片;
- PI (6FDA/BAPS) and PI (DSDA/HFBAPP) are verified including structure, viscosity, sensitivity, contrast, thermostabibity, dry etching resistance and other lithography parameters. 将合成之PI(6FDA/BAPS)与PI(DSDA/HFBAPP)做一连串基本性质鑑定与微影性质测试，结果证明此二种聚亚醯胺都具有优良电子束阻剂之特性。
- The mechanism of anisotropic etching the construction design of silicon anisotropic etching and two-side etching technology to produce microaccelerometer have been discussed in the paper. 本文讨论了各向异性腐蚀的机理；硅的各向异性腐蚀设计；双面光刻等与微硅加速度计有关的超精细加工问题。
- In addition, we reduced the air columns around the cavity and simulated the photonic bandgap and fabricated the devices by E-beam lithography and deep dry etching process. 未来将会对共振腔的几何形状做修正来符合光传播时的场型，并以此设计做出元件并加以量测。
- New type of magnetic sensitivity transistor is based on SOI,whose design principle and process are expatiated,and whose recombination region is set by anisotropic etching technology in MEMS. 构成新型磁敏三极管的复合区采用MEMS中的各向异性腐蚀技术进行设置,给出了这种复合区的复合机理。
- Abstract: The characteristics and progress of lithography technique and plasma etching technology are summarized.Their physical mechanisms and current research problems are also explained. 文摘:介绍了光刻与等离子体刻蚀技术的特点与进展，阐述了等离子体刻蚀的物理机制与前沿问题.
- After two layers of SiO2/ SiON with different refractive are finished, the designed mask pattern is printed on the film by photolithography, then through ICP for dry etching, the waveguide structures are obtained, for example AWG/EDG we obtained. 两层不同折射率的二氧化硅/氮氧化硅薄膜制备好后，再根据设计好的波导图形，经过光刻，感应耦合等离子体刻蚀(ICP)等工艺，制成所需要的光波导器件，如本研究中心制成的AWG、EDG等。
- Etching Technology of Refractory Metals Multilayer 多层难熔金属的刻蚀工艺技术研究
- LITHOGRAPHY AND PLASMA ETCHING TECHNOLOGY 光刻与等离子体刻蚀技术
- deep reaction ion etching technology 深刻蚀技术
- with no need of etching technology 无刻蚀
- Fabrication of Field Emitter Array with Dry Etching 干法刻蚀制作场发射阴极阵列
- Dry etching for high aspect ratio microstructures 深高宽比微结构的干法刻蚀
- Research of dry etching simulator in micromachining 微加工干法刻蚀工艺模拟工具的研究现状
- The etching technologies of ITO films suitable for laboratory operation, including gelatinization, border scouring, exposal, development, etching and so on ,are obtained after a series of experiments. 通过大锖实验摸索了一套适合实验室制作刻蚀ITO膜的工艺，其中包括涂胶、擦边、曝光、显影、刻蚀等。
