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- In the experiment, we sputter Si/ZnO on sapphire substrate, and do the I-V measurement, optical transmittance measurement and post-annealing process. 在研究薄膜变阻器的过程中,发现仅镀上氧化锌薄膜于蓝宝石基板上似乎没有发现电阻随电压呈现非线性变化的倾向。
- AES and ESCA has been applied to the analysis of the superconducting Nb-Ge film which were deposited onto sapphire substrate by a low-energy sputtering technique. 利用表面分析仪器俄歇电子能谱(AES)仪和电子能谱化学分析(ESCA)仪对超导Nb-Ge溅射膜进行表面和深度剖面分析,以探讨在溅射沉积成膜过程中A15结构Nb_3Ge能够稳定生长的机制,以及影响其转变温度T_c的因素。
- Pioneer investigation on instantaneous relaxation behavior of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE is presented in this thesis. 本文首次研究了蓝宝石邻晶面衬底RF-MBE生长GaN薄膜的瞬态光电导弛豫特性。
- Although the AlN layer was not fully relaxed as confirmed by the RHEED in-situ d-spacing measurement, it largely decreased the mismatch between the ZnO and the sapphire substrate. 由于氮气气氛下射频处理后,会在衬底表面形成一个薄的AlN层,很大程度上减小氧化锌和衬底之间的晶格失配率,从而改善了氧化锌的结晶质量。
- Unfortunately, the quality of GaN layers grown on SiC is inferior to that grown on the commonly used sapphire substrate due to the relative poor surface properties of SiC. 不幸的,由于碳化矽差表面性质使得氮化镓在碳化矽成长品质无法与在一般常用蓝宝石基板相比。
- Takashi O., Luis B.M., Ferry I., Kikuo O.,“Fabrication of a large area monolayer of silica particles on a sapphire substrate by a spin coating method”, Colloids and Surfaces A, Physicochem.Eng. 王惠君,“以回应曲面法探讨溶胶-凝胶法制备奈米二氧化矽之参数影响”,中原大学化学工程学系,2004。
- ZnO nanorods were then grown on the arrays via the VLS process.Microscopic observation on the nucleation and growth of ZnO nanorods grown from the a-plane sapphire substrate was made. 经由氧化锌奈米柱成核成长的显微观察,发现金颗粒触媒在成核阶段中因合金薄膜的形成而改变了位置。
- Furthermore, InGaN-GaN LED with roughening both the p-GaN surface and the undoped-GaN surface by double transfer methods and applying a mirror coating to the sapphire substrate have also demonstrated. 其中,主要是藉由晶圆接合技术制作高功率与高亮度发光二极体并探讨使用不同晶圆接合机制对其之发光二极体元件特性之影响。
- Research of Sapphire Substrate CMP 蓝宝石衬底材料CMP抛光工艺研究
- Chemical Mechanical Polishing of Sapphire Substrate 蓝宝石衬底片化学机械抛光的研究
- The optical properties of GaN, AlN and AlGaN grown on sapphire substrates were investigated by means of transmittance and reflectance measurements. 用穿透及反射量测以蓝宝石为基板的氮化镓、氮化铝及氮化铝镓的光学性质已经被探讨。
- A HIGHLY SELECTIVE HTS BANDPASS FILTER ON SAPPHIRE SUBSTRATE 一种以白宝石为衬底的高选择性高温超导滤波器
- Influence of Surface Treatment on the Sapphire Substrate 表面处理对蓝宝石衬底的影响
- Thin SiN layers and nitride-based multiquantum well( MQW) light emitting diode( LED) structures with conventional single GaN buffer and GaN/ SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition( MOCVD). 摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/化硅双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。
- Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). 摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/氮化矽双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。
- She had the sapphire set in a gold ring. 她把那枚蓝宝石镶在金戒指上了。
- GaN epitaxial layers and InGaN/GaN multiquantum well (MQW) blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. 摘要以一条状蓝宝石基板(PSS)与一传统蓝宝石基板两种不同基板来成长氮化镓磊晶层与氮化铟镓/氮化镓多层量子井(MQW)蓝光发光二极体。
- Study of ECR-plasma Cleaning and Nitridation of Sapphire Substrate Using RHEED 蓝宝石衬底分步清洗及其对后续氮化的影响
- The effects of sapphire substrate mis-cut angle on the properties of GaN films 蓝宝石衬底的斜切角对GaN薄膜特性的影响
- Research of Chemical Mechanical Polishing Technique of Sapphire Substrate 蓝宝石衬底的化学机械抛光技术的研究