Furthermore, InGaN-GaN LED with roughening both the p-GaN surface and the undoped-GaN surface by double transfer methods and applying a mirror coating to the sapphire substrate have also demonstrated.

• 其中，主要是藉由晶圆接合技术制作高功率与高亮度发光二极体并探讨使用不同晶圆接合机制对其之发光二极体元件特性之影响。