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- high reverse breakdown voltage 高反压
- If the critical reverse breakdown voltage is exceeded, a destructive breakdown occurs. 如果超过临界反向击穿电压，就会发生破坏性的击穿。
- Such as,the off/on time in the microwave band Tr is about 1.5 ns,the reverse breakdown voltage may reaches 75 V and reverse lea kage current is in the range of nA order. 文中报道了它的独特性能 :其反向击穿电压可达 75V;反向漏电流仅 n A量级 ;反向开关时间为 1.;5ns;可望应用于微波波段。
- Features: High breakdown voltage, low output capacitance, high fT. 特点:高击穿电压,低输出电容,特征频率高。
- reverse breakdown voltage 反向哗电压
- Purpose: Color TV chroma output and high breakdown voltage driver. 用途:用于彩电行输出和高击穿电压驱动。
- diode reverse breakdown voltage 二极管反向击穿电压
- High reverse rotation of drum at yarn cut. 在切割纱线过程中,槽筒速度快。
- Features: High breakdown voltage, excellent current characteristics. 特点：击穿电压高，电流特性好。
- Features: High VEBO, high reverse hFE, low on resistance. 特点：E-B反向击穿电压高，反向放大高，导通电阻低。
- Two important features of high-voltage (HV) devices are a low on-resistance (Ron) and a high breakdown voltage (VBV). 高压元件所追求的两个主要特性即：低的导通电阻及高的崩溃电压。
- Features: High breakdown voltage, low collector saturation voltage, high speed switching. 特点:击穿电压高，饱和压降低，开关速度快。
- And... that was the highest reverse dunk. 这是有史以来最高的反身灌篮。
- Features：High breakdown voltage ,high reliability,Fast switching speed, Wide ASO,Adoption of MBIT process,Micaless package facilitating mounting. 特点:击穿电压高,可靠性高，开关速度快，安全工作区宽，采用MBIT技术，采用全包封技术不需云母隔离。
- The Study of the Bi-Layered Ferroelectric Thin Films Structure of High Breakdown Voltage and Low Leakage Current , and the Fabrication of Memory Devices. 高介电薄膜材料及应用---靶材之提供与测试系统之建立---高耐压低漏电流双层铁电薄膜及记忆体元件之制造
- The experimental results demonstrate that this structure is desirable for application in power SIDs. Its advantages are high breakdown voltage and blocking gain. 实验结果表明该结构可用于制造各种功率静电感应器件 ;其优点是具有高的击穿电压和高的阻断增益 ;并讨论了平面型埋栅结构的主要特点和制造工艺 .
- However, high breakdown voltages necessarily need high-resistivity material. 但是，高的击穿电压必然要求采用高阻材料来制作。
- Voltage gradient descent at time to prevent from reverse breakdown 电压按时间梯度下降,防止反向过冲
- Advantages of these direct energy bandgap GaN-based semiconductors include low generation noises, high electron saturation velocity, high breakdown voltage, and high operation temperature. 直接能隙之氮化镓系列的半导体材料具有低杂讯、高电子饱和速度、高崩溃电压以及高工作温度等优点。
- Test results show that the corona's onset and breakdown voltage both rise with increasing OD of the nozzle. 结果表明:喷嘴外径增大,起晕电压和击穿电压升高。
