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- A STUDY ON COMPOSITIONS OF NITROGEN-RICH SiO_xN_y GATE DIELECTRIC FILM FABRICATED BY LOW TEMPERATURE PECVD METHOD AND ITS ELECTRICAL CHARACTERISTICS PECVD法制备SiO_xN_y膜中组份对电学特性的影响
- gate dielectric films 栅介质薄膜
- gate dielectric film 栅介质薄层
- Results show that HfO 2 gate dielectric hold good electrical characteristics. 实验结果显示 :Hf O2 栅介质电容具有良好的 C-V特性 ,较低的漏电流和较高的击穿电压。
- Device Processing: Etching. Surface passivation; dielectric films. 元件制程:蚀刻,表面钝化,介电材料薄膜。
- Device Processing : Etching. Surface passivation; dielectric films. 元件制程:蚀刻,表面钝化,介电材料薄膜。
- Breakdown Characteristics of HfO_2 Gate Dielectrics Films Under Constant Current Stress 恒电流应力引起HfO_2栅介质薄膜的击穿特性
- Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated. 成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ;并对其性质进行了研究 .
- Preparation of metallic and some dielectric films in thickness of nanometers. 纳米量级的金属薄膜及部分介质薄膜的制备。
- Especially, the quality of gate dielectric layer determines the reliability and electrical performance of ultra large scale integrated (ULSI) circuit. 特别是闸极介电层的品质能决定ULSI电路的稳定度与电特性表现。
- We focus on how the processes in repaid thermal processor (RTP) affect the electrical characteristics quality of gate dielectric layer. 我们将会集中以快速热制程如何影响介电层电特性。
- The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented. 简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
- For continued technology scaling, high k materials are required to replace SiO_2 as gate dielectric in the next generation metal oxide field effect transistors (MOSFET). 在过去二十多年里,Si基元器件的大小遵循Moore定律按比例的持续减小。 对于下一代金属氧化物半导体场效应管(MOSFET)器件,原来的栅极介电材料SiO_2已经不再适合使用。
- By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT=1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. 在国内首次将等效氧化层厚度为1·7nm的N/O叠层栅介质技术与W/Ti N金属栅电极技术结合起来;用于栅长为亚100nm的金属栅CMOS器件的制备.
- The mirrors here are coated with a multilayered dielectric film having a reflectance of over 99%. 这儿的反射镜上镀了一层多层介质膜,因而反射比超过99%25。
- As reducing the gate length toward to submicron CMOS device, selecting a gate dielectric material to improve the electric characteristics and been demonstrated by using ISE-TCAD simulation tool. 从改变氧化层材料与线宽之方式对元件性能的提升并藉由ISE-TCAD 模拟工具来探讨。
- Silicon oxide has been used as a gate dielectric of MOSFETs for more than forty years since MOSFET had been introduced due to its excellent stability, uniformity, and easy fabrication process. 自从金氧半导体场效电晶体被发明以来,二氧化矽巳经被用作为其闸极氧化层超过四十年之久,因为二氧化矽拥有极佳的稳定性和均匀度且制作过程较为简单。
- KFM/EFM offers excellent utility for measuring dielectric films, metal surfaces, piezoelectrics and conductor-insulator transitions. KFM/EFM为测量介电薄膜、具有金属表面的物体、压电体和绝缘体提供极好的使用性。
- FSG, as one kind of low k dielectric film, is very similar with SiO2 in structure and deposition, and can be well used in 0.18-0.13um ULSL. 氟掺杂的氧化硅玻璃(FSG)作为低介电常数材料的一种,它的制备工艺、结构和性能更接近二氧化硅,足以满足0.;18微米甚至0
- A method of manufacturing a flash memory device that prevents generation of voids when forming an interlayer dielectric film. 一种制造闪速存储器件的方法,其防止在形成层间介电薄膜时产生空隙。