Silicon oxide has been used as a gate dielectric of MOSFETs for more than forty years since MOSFET had been introduced due to its excellent stability, uniformity, and easy fabrication process.

• 自从金氧半导体场效电晶体被发明以来，二氧化矽巳经被用作为其闸极氧化层超过四十年之久，因为二氧化矽拥有极佳的稳定性和均匀度且制作过程较为简单。