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- direct tunneling gate current 直接隧穿栅电流
- According to the gate current result, the direct tunneling and F-N tunneling regime will be discussed. 直接穿隧电流之实验结果和F-N穿隧电流之实验结果将被个别讨论，以了解不同的形成原因。
- The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained by using higher dielectric constant material. 中文摘要在深次微米时代,当元件愈做愈小,氧化层越来越薄时,漏电流增大的问题急需解决,而此时应用高介电材料的来取代传统氧化矽便愈发重要。
- The hotel has direct tunnel connection to the station. 这家旅社有地道直通车站。
- Clearly, the pressure drop out of the gate current unfavorable impact of the shutdown GTO. 显然，这个压降对抽出门极电流不利，影响GTO的关断。
- Once the device begins to conduct, it is latched on and the gate current can be removed. 一旦器件（晶闸管）导通，门极电流即可去掉。
- The thyristor can be trigged into the on-state by applying a pulse of positive gate current for a short duration provided that the device is in its forward blocking state. 如果是处于正向阻断状态，只要在门极提供一个短暂的正脉冲，晶闸管就会导通。
- With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction. 就双极型晶体管而言,其门电流等于或超过必要的值,使发射极集电极充分导通的一种状态。
- During conduction, if the gate current is zero and the anode current falls below a critical limit, called the holding current, the device reverts to the forward blocking state. 在导通时若门极电流为零，阳极电流低于临界极限（即保持电流），该元件便恢复其正向截止特性。
- STUDY OF LANDSCAPE DESIGN AT TUNNEL GATE 隧道洞口景观设计研究
- It was a joy to walk through this long tunnelled gate and see the mountain loom into sight again. 走出长门洞，豁然开朗，山又到了我们跟前。
- Direct Tunneling Effect in SiC Schottky Contacts SiC肖特基接触的直接隧穿效应
- The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law. Idsat的退化可以用函数栅电流 ( Ig)乘以注入的栅氧化层电荷数 ( Qinj)的幂函数表达 .
- GTO is conventionally driven on a high enough amplitude and steepness with its current leading edge of drive circuit, which applies positive gate current for openness and negative current for shutoff. 摘要可关断晶闸管(GTO)要求其驱动电路提供的驱动电流的前沿应有足够的幅值和陡度，且一般需要在整个导通期间施加正门极电流，关断需施加负门极电流，幅值和陡度要求更高。
- The Effects of Barrier Lowering Induced by Image Potential on the Direct Tunneling Current in Ultrathin MOS Structures 镜像势引起的势垒降低对超薄栅MOS结构的直接隧穿电流的影响
- Reduction of Gate Current in Nanoscale MOS Devices 减少纳米MOS器件栅电流的研究分析
- time-dependence gate current model 时变栅电流模型
- She cast her eyes down to avoid direct eye contact. 她垂下双目以避免对视。
- I'll book you on a direct flight to London. 我将为你预订直飞伦敦的航班。
- A device used to convert direct current into alternating current. 反用换流器用于变直流电为交流电的仪器
