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- BCN thin films were grown by RF reactive sputtering. 用射频反应溅射法制备出 BCN薄膜 .
- Up to now reported NiOx coating are usually produced by rf reactive sputtering or electron beam reactive evaporation (BEV). 已报道的NiOx薄膜常用金属镍的射频反应溅射或电子束反应蒸发方法制备。
- Transparent and conductive oxides CdIn 2O 4 (CIO) thin films were prepared by RF reactive sputtering from a Cd-In alloy target in Ar+O 2 atmosphere. 在Ar+O2 气氛 ;采用射频反应溅射Cd In靶制备CdIn2 O4 (CIO)薄膜 .
- Influence of Annealing on Electron Field Emission from AIN Films Prepared by RF Reactive Sputtering 热退火对射频反应溅射氮化铝薄膜场电子发射的影响
- Influence of Substrate Temperature and Nitrogen Gas on Zinc Nitride Thin Films Prepared by RF Reactive Sputtering 衬底温度和氮气分压对氮化锌薄膜的性能影响
- c-BN thin films were deposited on p-rype Si wafers using RF reactive sputter, and were doped by implanting Be ions into them. RF射频溅射法制备c-BN薄膜,使用离子注入法将Be注入c-BN薄膜中进行掺杂,测量了掺杂前后c-BN薄膜的表面电阻率,并计算掺杂后c-BN薄膜激活能。
- The ZrN films were deposited by RF magnetron reactive sputtering system. 使用反应性磁控溅镀系统成长氮化锆薄膜。
- RF reactive sputtering 射频反应磁控溅射
- RF reactive sputter 射频反应溅射
- DLC and a-SiC:H films were prepared by the rf glow discharge and the reactive sputtering method respectively. 本文分别采用射频(13.;56MHz)等离子体CVD及射频反应溅射方法制得了DLC及a-SiC：H薄膜。
- S. B. Krupanidhi and M. Sayer,”Position and Pressure Effects in RF Magnetron Reactive Sputter Deposition of Piezoelectric Zinc Oxide” ,J.Appl.Phys.,vol. 56,pp. 3308,1984. 魏清梁，固态微型谐振器之压电层与反射层研制，国立中山大学电机工程研究所，硕士论文，2005.
- RF reactive magnetron sputtering RF反应磁控溅射
- radio frequency(RF) magnetron reactive sputtering 射频磁控反应溅射
- RF magnetron reactive sputtering 射频磁控反应溅射
- Aluminum nitride (AIN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering. 采用直流磁控反应溅射法,在Si(100)和Pt/Ti/St(100)上制备了具有较好(002)择优取向性的AlN薄膜。
- Effect of deposition condition on structure of RF reactively sputtered polycrystalline ZnO films 沉积条件对RF反应溅射多晶ZnO薄膜结构的影响
- The nitrogen partial-flow rates are increased in reactive sputtering, thus the thermal stability of TaN is decreased and work-function is increased. 若制程中增加溅镀机里的氮气流量，则所制作出来的氮化钽之功函数会增加而其热稳定性将会降低。
- The polycrystalline Fe_3O_4 film was prepared in O2 and Ar mixed atmosphere by facing-target reactive sputtering without substrate heating during the deposition. 在基底不加热的条件下,用对向靶反应溅射法在氩气和氧气的混合气氛中制备了多晶Fe_3O_4薄膜。
- The MOS capacitor with Al 2O 3 dielectric of 3 .45nm equivalent oxide thickness (EOT) is fabricated by reactive sputter. 利用反应溅射方法制备了等效氧化层厚度为 3 45nm的Al2 O3栅介质MOS电容 ;研究了Al2 O3作为栅介质的瞬时击穿和恒压应力下的时变击穿等可靠性特征 .
- Reactively Sputtered Cr-N Films，Master Thesis，Hsinchu. 陈培丽等，2000，真空硬膜技术，精密仪器发展中心，新竹市.
