c-BN thin films were deposited on p-rype Si wafers using RF reactive sputter, and were doped by implanting Be ions into them.

• RF射频溅射法制备c-BN薄膜,使用离子注入法将Be注入c-BN薄膜中进行掺杂,测量了掺杂前后c-BN薄膜的表面电阻率,并计算掺杂后c-BN薄膜激活能。