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- PECVD法PECVD
- PECVD法低温形成纳米级薄介质膜击穿特性的实验研究Experimental study of breakdown characteristic of thin dielectric film in nanometre range formed by low temperature PECVD
- 法law
- 无法unable
- PECVD法淀积氮化硼薄膜场发射特性研究Electron Emission Characteristics of BN Films Synthesized by PECVD
- 用法usage
- 说法statement
- 低温PECVD法形成纳米级介质膜微观结构研究Study of Microscopical Structure for the Dielectric Film in Nanometre Range Formed by Low Temperature PECVD
- M-PECVDM-PECVD
- ECR-PECVDECR-PECVD
- 输入法input method
- DBD--PECVDDBD - PECVD
- 用于薄介质栅的PECVD法低温形成SiO_xN_y薄膜及其电学特性SiO_xN_y Thin Film Formed by Low Temperature PECVD and Its Electrical Characteristics for Thin Dielectric Gate Application
- 除法division
- 分析法analytical method
- 商法commercial law
- 行政法administrative law
- PECVD法低温形成SiO_xN_y介质膜的俄歇电子能谱和红外吸收光谱分析Analysis of Auger electron spectrum and infrared absorption spectra of the SiO_xN_y thin dielectric film formed by low temperature PECVD
- 宾夕法尼亚Pennsylvania
- 读法pronunciation