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- High breakdown voltage device 高压器件
- Features: High breakdown voltage, low output capacitance, high fT. 特点:高击穿电压,低输出电容,特征频率高。
- Purpose: Color TV chroma output and high breakdown voltage driver. 用途:用于彩电行输出和高击穿电压驱动。
- Features: High breakdown voltage, excellent current characteristics. 特点：击穿电压高，电流特性好。
- Two important features of high-voltage (HV) devices are a low on-resistance (Ron) and a high breakdown voltage (VBV). 高压元件所追求的两个主要特性即：低的导通电阻及高的崩溃电压。
- Features: High breakdown voltage, low collector saturation voltage, high speed switching. 特点:击穿电压高，饱和压降低，开关速度快。
- Features：High breakdown voltage ,high reliability,Fast switching speed, Wide ASO,Adoption of MBIT process,Micaless package facilitating mounting. 特点:击穿电压高,可靠性高，开关速度快，安全工作区宽，采用MBIT技术，采用全包封技术不需云母隔离。
- The Study of the Bi-Layered Ferroelectric Thin Films Structure of High Breakdown Voltage and Low Leakage Current , and the Fabrication of Memory Devices. 高介电薄膜材料及应用---靶材之提供与测试系统之建立---高耐压低漏电流双层铁电薄膜及记忆体元件之制造
- The experimental results demonstrate that this structure is desirable for application in power SIDs. Its advantages are high breakdown voltage and blocking gain. 实验结果表明该结构可用于制造各种功率静电感应器件 ;其优点是具有高的击穿电压和高的阻断增益 ;并讨论了平面型埋栅结构的主要特点和制造工艺 .
- However, high breakdown voltages necessarily need high-resistivity material. 但是，高的击穿电压必然要求采用高阻材料来制作。
- In this thesis, we use TCAD simulation software to design a 450V LDMOSFET.We adjust the parameters to make the device have not only low turn-on resistance but also high breakdown voltages. 在本论文中，我们利用TCAD软体设计额定崩溃电压为450V的LDMOSFET，并在导通电阻与崩溃电压间取得平衡点，使其能兼顾低导通电阻与高崩溃电压。
- Advantages of these direct energy bandgap GaN-based semiconductors include low generation noises, high electron saturation velocity, high breakdown voltage, and high operation temperature. 直接能隙之氮化镓系列的半导体材料具有低杂讯、高电子饱和速度、高崩溃电压以及高工作温度等优点。
- A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region 漂移区纵向线性掺杂的SOI高压器件研究
- Based on the analytical model, the dependencies of the electric field distribution and breakdown voltage on the device parameters are investigated. 借助解析模型，研究了电场分布和器件击穿电压与结构参数的关系。
- It is concluded that breakdown of PCSS is closely related to the device temperature.Higher breakdown voltage can be achieved by better heat sink for PCSS. 光导开关击穿特性与温度密切相关,改善光导开关散热条件可提高开关耐压水平。
- Obviously, it will be applied broadly in the automation and low voltage device systems. 因此在自动化和低压电器系统中会有广阔的发展前途和应用领域。
- By using the popular 2-D semiconductor device simulator, device termination structure with FLR is simulated and analysed, especially the influence of surface charges on breakdown voltage and optimal spacing of ring to ring . 最后用流行的2-D半导体器件模拟工具MEDICI对器件终端进行相关模拟;尤其是表面电荷对带场限环的击穿电压和优化环间距的影响做了大量的分析模拟.
- Test results show that the corona's onset and breakdown voltage both rise with increasing OD of the nozzle. 结果表明:喷嘴外径增大,起晕电压和击穿电压升高。
- The clamping snubber circuit was set to the rated breakdown voltage of the MOSFET (600 V and 800 respectively). 钳位缓冲电路被设定在场效应晶体管的额定击穿电压上（分别为600伏特和800伏特）。
- SOI High Voltage Device and SPIC Technology SOI高压器件及高压集成技术
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