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- From the band offset viewpoint, those obtained numbers indicate that Er2O3 could be a promising candidate for high-k gate dielectrics. 仅从这一角度来看，Er2O3相对于Si由于其比较大而且对称的价带和导带偏移而可能成为一种很有应用前景的高k栅介质材料。
- Chapter 5 is related to 2D device physics, we discuss FIBL(fringing-induced barrier lowering) in subthreshold region with various gate dielectrics, sidewalls, and drain voltages. 第五章探讨二维的元件物理特性，讨论不同闸极介电层、边墙材料、和汲极偏压下，次临界区域的边缘引发位障下降现象。
- The result shows that N/O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT,which also indicates that N/O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do. 结果表明 ;Si3N4 / Si O2 叠层栅介质比同样 EOT的纯 Si O2 栅介质有更长的寿命 ;这说明 Si3N4 / Si O2 叠层栅介质有更高的可靠性 .
- The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime. 结果表明 ;同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ;前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 .
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二维模拟软件Medici对以ZrO:为栅介质的体硅MOS器件和501 MOS器件的性能进行了模拟。 系统模拟了以ZrO:为栅介质的体硅MOS器件和常规MOS器件性能对比，以及ZrO:为栅介质的501 MOS器件的性能与常规501 MOS器件性能的对比。
- In this thesis, we have systematically investigated the electrical and material characteristics of hafnium-family gate dielectrics, including HfO2, HfOxNy and HfSiON, on bulk Ge substrates. 摘要:本论文中，我们有系统地调查各种含金属铪之闸极介电材料，包括二氧化铪、氮氧化铪及氮氧化矽铪，沉积在块材锗基板上的电物性研究。
- Results show that HfO 2 gate dielectric hold good electrical characteristics. 实验结果显示 :Hf O2 栅介质电容具有良好的 C-V特性 ,较低的漏电流和较高的击穿电压。
- Electrical Properties of HfO_2 and HfO_xN_y Gate Dielectrics HfO_2高K栅介质的电学特性及其氮化效应研究
- Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated. 成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ;并对其性质进行了研究 .
- Especially, the quality of gate dielectric layer determines the reliability and electrical performance of ultra large scale integrated (ULSI) circuit. 特别是闸极介电层的品质能决定ULSI电路的稳定度与电特性表现。
- We focus on how the processes in repaid thermal processor (RTP) affect the electrical characteristics quality of gate dielectric layer. 我们将会集中以快速热制程如何影响介电层电特性。
- The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented. 简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
- For continued technology scaling, high k materials are required to replace SiO_2 as gate dielectric in the next generation metal oxide field effect transistors (MOSFET). 在过去二十多年里,Si基元器件的大小遵循Moore定律按比例的持续减小。 对于下一代金属氧化物半导体场效应管(MOSFET)器件,原来的栅极介电材料SiO_2已经不再适合使用。
- A man appeared at the castle gate in the guise of a woodcutter. 一个男子打扮成樵夫的模样出现在城堡的门口。
- Did you remember to padlock the gate? 你是否记得用挂锁把大门锁上？
- I saw him make by the gate on his bicycle. 我看见他骑自行车从大门旁边过去了。
- The truck came to a dead stop out of the gate. 那辆卡车在大门外突然停下。
- I can open the back gate at midnight. 午夜的时候我可以打开后门。
- A flock of sheep poured through the gate. 一群羊从羊圈口涌了出来。
- Have you closed the gate and windows? 你把门窗关严实了吗？
