Chapter 5 is related to 2D device physics, we discuss FIBL(fringing-induced barrier lowering) in subthreshold region with various gate dielectrics, sidewalls, and drain voltages.

 
  • 第五章探讨二维的元件物理特性,讨论不同闸极介电层、边墙材料、和汲极偏压下,次临界区域的边缘引发位障下降现象。
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