In this thesis, we have systematically investigated the electrical and material characteristics of hafnium-family gate dielectrics, including HfO2, HfOxNy and HfSiON, on bulk Ge substrates.

• 摘要:本论文中，我们有系统地调查各种含金属铪之闸极介电材料，包括二氧化铪、氮氧化铪及氮氧化矽铪，沉积在块材锗基板上的电物性研究。