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- 光CVD淀积条件对a-Si:H薄膜的影响(英文)Influence of Deposition Conditions on Properties of a-Si:H Prepared by Photo-CVD
- 光CVD系统气流模式分析Analysis of Gas Flow Mode in Fhoto-CVD System
- 光light
- TiO_2薄膜的聚集密度提高了20%,折射率从常规工艺的2.03提高到2.37。The IAD increases the packing density of TiO2 films by 20%25, hence the refractive index arises from 2.03 upto 2.37.
- 微波激励氙VUV光源直接光CVD设备及其应用DIRECT PHOTO-CVD EQUIPMENT WITH VUV LIGHT XENON SOURCE EXCITED BY MICROWAVE AND ITS APPLICATION
- CVD法大面积SnO_2薄膜的沉积LARGE AREA SnO_2FILMS DEPOSITED BY CVD METHOD
- 薄膜film
- 研究了VUV(真空紫外)光直接光CVD(化学汽相淀积)SiO2/Si界面微结构缺陷与衬底温度(Ts)的关系。Research is made on the effect of substrate temperature(?T??s)on defects of SiO?2/Si interface caused by vacuum ultraviolet (VUV)photochemical vapor deposition (CVD).
- TiO_2薄膜TiO_2 film
- 光的photic
- 用光finish up
- 掺杂态聚苯胺蜂窝状有序多孔薄膜的制备及形成机制的探讨Fabrication of Ordered Honeycomb Structure Porous Film with Doped Polyaniline and Its Formation Mechanism
- 走光fog
- ECR-PECVD制备SiO_2薄膜中衬底射频偏压的作用INFLUENCE OF RF SUBSTRATE BIAS ON SiO_2 FILMS PREPARED BY ECR PECVD
- 夜光noctilucence
- 探索了制备掺铒、镱铒共掺Al_2O_3薄膜的三种工艺方法。The Er-doped or Yb:Er co-doped Al_2O_3 films have been prepared by three kinds of technique.
- SnO_2薄膜的物理特性PHYSICAL PROPERTIES OF SnO_2 FILMS
- %SiO_2的CoPt合金薄膜的有序化温度明显升高到了We also found the addition of SiO_2 in CoPt thin film increases the ordered temperature.
- 掺铒nc-Si/SiO_2薄膜中nc-Si和Er~(3+)与非辐射复合缺陷间相互作用对薄膜发光特性的影响Influence of coupling between Er~( 3+) , nc-Si and nonradiative centers on photoluminescence from Er~( 3+) -doped nc-Si/SiO_2 films
- 不同氧氩比例对氧化硅(SiO_2)薄膜的结构及性能的影响Effects of O_2/Ar Flow Ratio on the Structure and Properties of Silicon Dioxide (SiO_2) Films