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- Comparison of the Solid-phase Crystallization between Conventional Furnace Annealing and Pulsed Rapid Thermal Method 常规退火与光退火固相晶化的对比
- pulsed rapid thermal method 光退火
- pulsed rapid thermal annealing 光退火晶化
- This is the RTX (Rapid Thermal Exchange) glove. 这是一个RTX (快速热量调换)手套。
- Pb(Zr0.52Ti0.48)O3 (PZT) and (Ba0.7Sr0.3)TiO3 (BST) ferroelectric thin films with distinct perovskite microstructure were prepared by RF magnetron sputtering method ,following a rapid thermal annealing (RTA) process. 应用射频磁控溅射方法;利用快速热退火(RTA)工艺;分别制备出了具有良好铁电性能的 Pb(Zr0.;52Ti0
- Blue|emitting porous silicon(PS) prepared by hydrothermal etching was treated by rapid thermal oxidation (RTO) process. 对用水热腐蚀技术制备的、具有蓝光发射的多孔硅样品在快速热氧化 (RTO)处理前后其光致发光谱、硅纳米颗粒的大小及尺寸分布变化进行了研究 .
- In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. 中文摘要在此篇论文里，使用快速热退火去形成镍化矽的制程被研究。
- The behaviour of infrared rapid thermal annealing (IRTA) of GaAs MESFET active layer and n+ layer formed by Si+ implantation is studied. 本文研究了GaAs MESFET有源层和n~+层Si~+注入的红外快速退火行为。
- We used liquid phase deposition (LPD) method in stead of traditional thermal method to deposit oxide films, and the LPD has higher efficiency due to more defects in it. 由于锗融点的关系我们以液相沈积法代替传统的热成长法来成长氧化层，且由于液相沈积法成长的氧化层有较多的缺陷所以有较高的效率。
- On the other hand, utilizing Rapid Thermal Processing (RTP) system, SiNWs were prepared on the same substrates as above. 另外，通过1150℃和1200℃下30s的快速热处理(Rapid Thermal Processing，RTP)，在镀金硅衬底上生长出SiNWs。
- Imptrove connection with original aliminum-plastic pipe ;apply for PP-R fitting thermal method for further connection ,features safety and reliability and less integral cost . 改善了原铝塑管的连接方式，采用PP-R管件热熔方式连接，安全可靠，综合成本低。
- The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated. 摘要研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响。
- D.Yao and B.Kim, ”Rapid Thermal Response Molding for Cycle Time Reduction”, SPE ANTEC Tech.Paper, pp.607-611. (2003). 3.D.H.Kim, M.H. 彭信舒，”射出成型模具表面瞬间加热建置与分析之研究”，私立中原大学机械工程学研究所博士论文(2003)。
- Moreover, after rapid thermal annealing (RTA), the TE dominant peaks can be changed to transverse-magnetic (TM)-field-enhanced and vice versa. 并且，在快速热退火(RTA)之后，原本横向电波主宰的波峰能转变成横向磁波主宰，反之亦然。
- The effect of nickel contamination under rapid thermal processing (RTP) on the magic denuded zone (MDZ) in Czochralski silicon is investigated. 摘要研究了过渡族金属镍在快速热处理作用下对直拉单晶硅中洁净区形成的影响。
- We utilized rapid thermal annealing (RTA) and laser induced annealing (LIA) processes to form nickel silicide and discussed the role of amorphous silicon in annealing process. 我们分别利用快速热退火与雷射引致退火形成矽化镍并讨论非晶矽在退火制程中所扮演的角色。
- The effect of high temperature in rapid thermal process (RTP) on the dissolution of oxygen precipitate generated by two-step (low-high) annealing is investigated. 摘要通过对已经过两步（低－高）退火的大直径直拉矽单晶片进行高温快速热处理，研究矽中氧沈淀被高温快速热处理消融的情况。
- Hill, C., Jones, S., and Boys, D., 1989, Rapid Thermal Annealing-Theory and Practice, in Reduced Thermal Processing for ULSI, NATO ASI Series B: Physics, pp. 143-180. 王振源及吴志阳;2001;“快速热处理机台即时温度量测系统最佳化设计;”机械关键系统技术研究发展第二期三年计划;中山科学研究院.
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
- The ZrCl4, HfCl4, and SiCl4 were used as the sol-gel precursors to form the hafnium and zirconium silicate after rapid thermal annealing at high temperature. 我们以四氯化锆、四氯化铪及四氯化矽为溶胶-凝胶溶液之前驱物，旋转涂布于晶圆上形成薄膜，经高温退火后形成含有锆及铪之金属矽氧化物。
