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- dry etch technique 干法刻蚀
- A dry etch technology for poly-silicon using Cl2, SF6 and N2 mixed gas has been developed on Tegal 1512e. Different effects of positive resist mask for LDD and SiO2 mask for SST on the process are discussed. 在Tegal1512e设备上,采用Cl_2、SF_6、N_2混合气体,开发了多晶硅干法腐蚀工艺,讨论了LDD的正胶掩膜及SST的SiO_2掩膜对工艺的不同影响。
- Dow etching: A powerless etching technique for letter-press plates invented by Dow Chemical Corporation. 陶氏腐法:陶氏化学公司发明的一种无粉腐技巧。用来制造活版印版。
- Inductively Coupled Plasma Dry Etch of InSb Thin Film 感应耦合等离子体干法刻蚀锑化铟薄膜研究
- Dow etching A powerless etching technique for letter-press plates invented by Dow Chemical Corporation. 陶氏腐法陶氏化学公司发明的一种无粉腐技巧。用来制造活版印版。
- The principle and the main parameters of the dry etching for silicon dioxide are introduced. 摘要阐述了二氧化矽干法蚀刻的原理和主要的蚀刻参数。
- It is necessary to measure Young's modulus of micro-mained materials because of the special manufacture process by using silicon etching technique. 摘要利用蚀刻矽技术制造的微机械构件，由于特殊的制作工艺而需要对其材料的杨氏模量进行测量。
- To approach as a resist in dry etching processing, etching properties of the films in oxygen plasma have been investigated. 为了探索该种薄膜在干刻蚀工艺过程中用作掩膜的可能性，还研究了它在氧离子体中的刻蚀性能。
- With the principles and processes of photolithography,dry etching and wet etching,the fabrication of the head slider were experimented. 然后利用光刻、湿法刻蚀和干法刻蚀的工艺及设备,分别进行了该磁头滑块结构的湿法和干法刻蚀试验,给出了刻蚀参数及所加工的磁头照片;
- Lising KOH anisotropic wet etching technique to obtain the V-shape structure of fiber array.This technique apply precrision alignment to control undercut effective. 利用KOH非等向性湿蚀刻技术，得到光纤阵所需之V型凹槽结构，并配合精确对准光罩之应用，有效控制侧蚀量，应用于光纤阵列晶圆制程技术。
- PI (6FDA/BAPS) and PI (DSDA/HFBAPP) are verified including structure, viscosity, sensitivity, contrast, thermostabibity, dry etching resistance and other lithography parameters. 将合成之PI(6FDA/BAPS)与PI(DSDA/HFBAPP)做一连串基本性质鑑定与微影性质测试，结果证明此二种聚亚醯胺都具有优良电子束阻剂之特性。
- In addition, we reduced the air columns around the cavity and simulated the photonic bandgap and fabricated the devices by E-beam lithography and deep dry etching process. 未来将会对共振腔的几何形状做修正来符合光传播时的场型，并以此设计做出元件并加以量测。
- A Dry Etch Technology for SiO2 Sidewall in LDD and SST Device Structures 用于LDD和SST的SiO_2边墙干法腐蚀工艺研究
- In this thesis, etched walls with verticality of better than 89? and Root-mean-Square (RMS) surface roughness of below 10 nm are achieved by using non-switched Inductivity Coupled Plasma (ICP) etching technique. 论文采用无切换的电感耦合等离子体刻蚀(ICP)技术在SOI材料上刻蚀出垂直度好于89°、均方根表面粗糙度小于10nm的刻蚀侧壁。
- I dry my hands and face with the towel. 我用毛巾擦干了双手和面部。
- It is necessary to measure the mechanical properties such as Yong's modulus of micro\|machined materials because of the special manufacturing process by using silicon etching technique. 利用蚀刻硅技术制造的微机械构件,由于特殊的制作工艺而需要对其材料的机械性能如杨氏模量等进行测试。
- The old well was bricked up when it ran dry. 旧井干枯以后被人用砖堵上了。
- The road is only negotiable in the dry season. 这条道只有在旱季才能通行。
- Three potentials pertinent to various etching techniques are labeled in Fig. 10. 与各种蚀刻技术有关的三个电势标出在图10中。
- The technique is still at the experimental stage. 这项技术正处于实验阶段。
