您要查找的是不是：
- Ge组分Ge profile
- Raman散射的峰位不仅与 Ge组分有关 ,而且与其中的应力状态有关 . 在完全应变和完全弛豫的情况下 ,Si1- x Gex 层中的 Si- Si振动模式相对于衬底的偏移都与 Ge组分成线性关系 .There is a linear Ge composition dependence of the Si|Si optical phonon mode shift,which is relative to the Si substrate for both fully relaxed and fully strained SiGe layers, as is used to calculate the extent of stress relaxation combined with the measured Raman shift.
- 分minute
- 组to form
- 分页pagination
- 拆分split
- 分时time-sharing
- Zn组分Zinc composition
- 全组分all-components
- 三组分three-component
- COD组分COD components
- In组分indium content
- NOM组分isolated NOM fractions
- 7S组分11S
- 四组分4 components
- 11S组分7S
- Al组分A1 composition
- 两组分solid particles
- RNA组分RNA ingredient
- 二组分two solid phases
