您要查找的是不是:
- vacuum thermal anneal 真空热退火
- vacuum thermal annealing 真空热处理
- Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA). 用金属蒸发真空弧离子源注入机将Y离子注入硅,制备出特性良好的硅化物。
- Finally, we made chalcogenide glass films byCBD (chemical bath deposition) and vacuum thermal evaporation. 还用化学池沉积法和真空蒸镀法分别制备了硫系玻璃薄膜并进行了相关性能检测。
- In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. 中文摘要在此篇论文里,使用快速热退火去形成镍化矽的制程被研究。
- Af-ter thermal annealing about 60% of radiation damage induced by implantation can be restored. 在热退火后,约60%25的注入引起的辐射损伤可以得到恢复。
- Effects of thermal annealing on the dielectric properties of PZN-PT-BT system ceramics were studied. 考察了退火热处理对PZN-PT-BT陶瓷介电性能和介电弛豫的影响。
- Abstract: Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA). 摘 要: 用金属蒸发真空弧离子源注入机将Y离子注入硅,制备出特性良好的硅化物。
- In this thesis, we demonstrate thin silicon shadow masks used for vacuum thermal evaporation (VTE) for manufacturing compact-size OLED (organic light emitting diodes) displays. 摘要:本篇论文探讨矽材料热蒸镀遮罩在真空热蒸镀制程中使用的特性,并可在有机发光二极体显示器制造过程中使用。
- The behaviour of infrared rapid thermal annealing (IRTA) of GaAs MESFET active layer and n+ layer formed by Si+ implantation is studied. 本文研究了GaAs MESFET有源层和n~+层Si~+注入的红外快速退火行为。
- Moreover, after rapid thermal annealing (RTA), the TE dominant peaks can be changed to transverse-magnetic (TM)-field-enhanced and vice versa. 并且,在快速热退火(RTA)之后,原本横向电波主宰的波峰能转变成横向磁波主宰,反之亦然。
- We utilized rapid thermal annealing (RTA) and laser induced annealing (LIA) processes to form nickel silicide and discussed the role of amorphous silicon in annealing process. 我们分别利用快速热退火与雷射引致退火形成矽化镍并讨论非晶矽在退火制程中所扮演的角色。
- The experimental results indi cate that the Nf and Nit of laser- recrystallized specimens are much lower than those of non recrystallized samples with thermal annealing. 结果表明,和未再结晶的热退火样品相比,激光再结晶后,背界面的界面态密度大幅度下降。
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
- The ZrCl4, HfCl4, and SiCl4 were used as the sol-gel precursors to form the hafnium and zirconium silicate after rapid thermal annealing at high temperature. 我们以四氯化锆、四氯化铪及四氯化矽为溶胶-凝胶溶液之前驱物,旋转涂布于晶圆上形成薄膜,经高温退火后形成含有锆及铪之金属矽氧化物。
- In this paper, the influences of conventional furnace annealing (CFA) and rapid thermal annealing (RTA) and annealing time on STO films were systematically studied. 系统研究了CFA与RTA两种热处理方式以及热处理温度和时间对STO薄膜微结构的影响。
- Another noteworthy feature is that the inhomogeneous oxidation of as-deposited HfN film is examined and transferred into the homogeneous HfOxNy film after thermal annealing. 另一个值得注意的现象是对于刚沉积的氮化铪薄膜中,即已经出现了不均匀的氧化,但经过后续的高温制程处理将转变成为均匀的氮氧化铪薄膜。
- THE VACUUM THERMAL TEST OF A SMALL SATELLITE 某航天小卫星的真空热试验
- Pb(Zr0.52Ti0.48)O3 (PZT) and (Ba0.7Sr0.3)TiO3 (BST) ferroelectric thin films with distinct perovskite microstructure were prepared by RF magnetron sputtering method ,following a rapid thermal annealing (RTA) process. 应用射频磁控溅射方法;利用快速热退火(RTA)工艺;分别制备出了具有良好铁电性能的 Pb(Zr0.;52Ti0
- Some pumps and all vacuum cleaners work by suction. 有些泵和所有真空吸尘器都是借吸力工作的。