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- The supersonic molecular beam technique is used to study the dynamics of laser-induced surface reactions of Ta surface with chlorine at three different wavelengths(355, 560, 1064 nm). 本文研究了在三种不同波长的脉冲激光(365 nm;560 nm和1064 nm)辐照下超声Cl_2分子束与多晶Ta表面的化学反应动态学.
- Supersonic molecular beam injection 超声分子束加料
- OPTIMIZATION ANALYSIS OF TOKAMAK PLASMA FUELLING WITH SUPERSONIC MOLECULAR BEAM 托卡马克等离子体超声分子束加料的优化研究
- Detecting and Data-Processing of Velocity Distribution of Supersonic Molecular Beam 超声分子束束源速度分布的探测及数据处理
- Study on Spectral Line Shape Affected by Transit-broadening in Supersonic molecular beam 超声分子束中穿越加宽对光谱线型的影响
- Effects of fuelling by using high-pressure supersonic molecular beam in the HL-1M tokamak HL-1M装置高气压超声分子束加料效果
- SUPERSONIC MOLECULAR BEAM STUDIES ON THE DYNAMICS OF LASER-INDUCED Cl_2-Ta SURFACE-REACTIONS 超声分子束研究激光诱导Cl_2和Ta表面反应动态学
- supersonic molecular beam 超声分子束
- O-chlorophenol/water mixed clusters were studied using both laser multiphoton ionization mass spectrum and supersonic pulsed molecular beam technique. 应用激光多光子电离质谱与超声脉冲分子束技术研究邻氯苯酚-水的混合团簇。
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术（ MBE ）的发明经过、现况、和将来的发展。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士，实在很烦。
- To narrow the molecular beam (water group), adjusting the molecular structure of volatility. 缩小分子束(水分子集团)，调整分子结构波动。
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
- The dynamics of thermal reaction of Ge(111) surface with chlorine molecules has been studied using molecular beam relaxation spectrometry (MBRS). 本文用分子束弛豫谱研究了Ge(111)表面与氯分子热反应动态学。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
- Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
- Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最后我们使用固态分子束磊晶器，以砷化铟/砷化镓量子点作为活性层，磷化铟镓作为被覆层制作半导体雷射并量测其特性。
- Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
