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- High sputtering power produces an amorphous Cr-N film. 过高的溅射功率使薄膜以非晶态的形式存在。
- The design of a DC sputtering power source was presented. 介绍一种大功率直流溅射恒流电源的设计。
- The results show that the sputtering power significantly affects the compactness of the A1 film. 初步探讨了溅射功率、气压和时间等不同溅射参数对铝层结构和铝层在氟塑料表面附着情况的影响。
- The sputtering power has a great influence upon the structural and electrochemical properties of tin oxide films. 溅射功率对薄膜的电化学性能有较大的影响。
- Low sputtering power results in less compact A1 film and weak interfacial adhesion, whereas high sputtering power overheats and considerably bends the composite films. 结果表明:溅射功率是决定复合薄膜质量的重要因素,功率过低得不到致密的铝层结构,而且铝层容易从氟塑料表面脱离,功率过高则会产生很强的热效应而使复合薄膜弯曲。
- Improving the growing temperature and sputtering power is beneficial to the adhesion of AlN film in high temperature treatment. 适当提高衬底加热温度和溅射功率有利于改善AlN膜高温热处理时的附着性能。
- And the BCN thin films that were deposited at the sputtering power of 110 W possessed the lowest atomic number of C and the biggest thickness. 并且,射频功率为110W条件下制备的硼碳氮薄膜中C元素含量最低,薄膜最厚。
- ITO thin films were prepared by radio-frequency magnetron sputtering technique at different sputtering power,and applied to HIT solar cells. 采用射频磁控溅射技术在不同射频功率下沉积了ITO薄膜,并将其应用于HIT太阳电池。
- Tin oxide films were deposited on silicon substrates at room temperature using the radio frequency (RF) magnetron sputtering with different sputtering power. 摘要应用射频磁控溅射技术在硅基底上制备氧化锡薄膜,着重研究溅射功率对薄膜结构和电化学性能的影响。
- With optical microscope, friction and wear spectrometer and scratch spectrometer, the influence of the parameters of sputtering time, sputtering power and interface layer on the film was studied. 借助光学显微镜、摩擦磨损试验仪和划痕试验仪等研究了溅射时间、溅射功率以及中间层对薄膜性能的影响。
- Ideal CIG precursor film composed of both Cu11In9 and CuIn phases could be obtained under the condition of sputtering power of 0.26 and 0.10 W/cm2 for CuIn and CuGa targets,respectively. 当溅射CuIn和CuGa合金靶的功率密度分别为0.;26和0
- The influence of the technical parameters such as substrate temperature, O2:Ar, working gas pressure and sputtering power on the photoelectric properties of samples was studied and analyzed. 研究分析了基片温度、氧氩比O2:Ar、工作气压、溅射功率等工艺参数对样品的光学性能和电学性能的影响。
- Although raising sputtering power is advantageous, the outrageous power will damage the ITO thin film's characteristics.The increasing of ITO thin film's thickness will depress the resistivity. 溅射功率的提高有利于ITO电阻率的下降,但是功率过高会破坏ITO薄膜的特性:ITO膜厚度的增加导致其电阻率减小。
- The effect of increasing sputter power is similar with that of increasing substrate temperature;however, more remarkable influence of substrate temperature is observed in this study. 提高溅镀源功率则与提高基板温度有相同的影响趋势,但以基板温度的影响较为显著。
- The king was shorn of his power by his nobles. 国王被手下的贵族们剥夺了权力。
- Cu(In1-xGax)Se2 films with its Cu(In+ Ga)ratio being as high as 0.270:1 ,can be grown by selenizing the CIG precursors, which was deposited at the sputtering powers of 0.24 W/cm2 for CuIn target and 0.30 W/cm2 for CuGa target,respectively. 在CuIn和CuGa合金靶的功率密度分别为0.;24和0
- The engine gave a sputter and died. 引擎发出一阵劈啪声就熄火了。
- Open tender for purchasing power transformer. 公开招标购买电力运输设备。
- James unleashed his power on Susan in revenge. 杰姆斯利用权力报复苏珊。
- Industry is a heavy user of electric power. 工业需耗费大量的电力。
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- 深远海浮式风电平台 - deep-sea floating wind power platform
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- 京雄高速公路 - Beijing-Xiongan expressway
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- 农业及相关产业增加值 - the added value of agriculture and related industries