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- single aluminum memory cell 单层铝金属化式存储单元
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- The surface of the single aluminum plate curtain wall is generally chromized and then experienced fluorine-carbon spray coating. 铝单板幕墙表面一般经过铬化等前处理后,再采用氟碳喷涂处理。
- Turn the brass memory lock ring until the aluminum memory ring stop contacts the step on the valve stem. Do not overtighten. Finger-tight pressure is sufficient. 旋转黄铜记忆锁环直到铝记忆环停止接触阀杆上的台阶为止。不要过紧。手指旋紧压力已经足够了。
- The surface of aluminum flakes were coated by the reactant,each single aluminum particle was completely sealed for stabilization of aluminum flakes. 被处理的铝粉表面被反应物包覆,使单个铝粉粒子完全密封,从而使铝粉变得稳定。
- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- One was a technique to lay down polysilicon so that each island of a single crystal is large enough to encompass many memory cells or transistors. 第一种技术是铺陈多晶矽的技术，这项技术使每一个单晶矽岛变得足够大，因而能包含更多的记忆胞或电晶体。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 镜像位方案通过把每个比特存储在一个绝缘栅两端的方法在每个存储单元中存储两个比特。
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
- Material and structure of single aluminum plate curtain wall 铝单板幕墙的材质及构造
- Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同时分析了栅宽与 SNM的关系 ,其结论与实验结果一致 ,并给出了 VDSM SRAM存储单元设计中应注意的问题
- Based on the unified ferroelectric device model which is applied practically to the design, the 2T 2C configuration of the ferroelectric DRO memory cell is discussed in detail. 基于被应用于实际设计之中的统一的铁电器件模型，详细讨论了2T?2C组态的铁电破坏性读出存储器单元的设计。
- Physical addresses are used to address memory cells in memory chips. 物理地址是用来真正访问内存单元的地址。
- Unused memory cells following the BELL&RET command are considered free. 在电铃&浸水使柔软指令之后的不用记忆单元是考虑过的免费。
