Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given.

 
  • 文中同时分析了栅宽与 SNM的关系 ,其结论与实验结果一致 ,并给出了 VDSM SRAM存储单元设计中应注意的问题
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