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- CMOS Devices Isolated by an Implanted Silicon Nitride Layer 离子注入氮化硅隔离的CMOS器件
- On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT. 与此同时,制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管(TFT)这一课题的需要。
- The first is a silicon nitride window sandwich (picture below). 第一种是氮化硅夹心窗（下图）。
- Too high of a surface temperature will result in a silicon nitride reaction. 表面温度过高容易导致硅、氮发生反应。
- The picokeystone is trapped between the two silicon nitride windows. 小楔块儿陷于两个氮化硅窗体中间。
- The maximum x-directional strain of NMOS channel is 0.6% when the model is gave 1GP of the intrinsic stress of the silicon nitride capping layer under a temperature loading of -400K. 对于奈米结构而言，本研究所建立之模拟方式可详尽探讨弯矩对应变矽之力学行为，并可依此对NMOS元件进行分析与设计。
- The common ceramic used for SKF bearing rings and rolling elements is a bearing grade silicon nitride material. 常用于SKF轴承套圈和滚动体的陶瓷材料是轴承级的氮化硅材料。
- Hybrid bearings have rings of bearing steel and rolling elements of bearing grade silicon nitride (Si3N4). 陶瓷混合轴承具有轴承钢的套圈和轴承级氮化硅的滚动体(Si3N4)。
- The invention relates to a manufacturing method of a titanium nitride layer as well as an apparatus thereof. 本发明涉及一种氮化钛层的制造方法及其装置。
- Under insufficient lubrication conditions there is no smearing between silicon nitride and steel. 在润滑不充分的条件下,氮化硅和钢之间不会发生沾污。
- It is also used as the etchant for etching Aluminum and Silicon Nitride film in semi-silicon IC. 在硅平面晶圆集成电路生产中，用于铝及氮化硅的蚀刻；
- Sintering aids were one of key factors affecting microstructure and properties of silicon nitride ceramics. 烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。
- This paper presents the dielectric and mechanical properties of porous silicon nitride ceramics. 研究了预烧结对反应烧结多孔氮化硅陶瓷的介电性能和力学性能的影响。
- The effect of holding time on intergranular phase and mechanical property of GPS silicon nitride ceramics was studied. 研究了保温时间对气压烧结(GPS)氮化硅陶瓷晶界相及力学性能的影响。
- It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily. 通常认为高频下制备得到的氮化硅膜呈现张应力;但是通过实验;表明即使应用高频(13.;56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。
- Silicon nitride ceram is widely used as a high-temperature structural material and is one of the most promising materials. 氮化硅陶瓷广泛用作高温结构材料，是很有前途的陶瓷材料之一。
- The nitride layer was formed on the surface of ductile cast iron by gas multi-element penetration, and the phase structure and section appearance of nitride layer were analyzed by the XRD and SEM. 球墨铸铁经过气体多元共渗后可在其表面形成氮化层,通过X射线衍射和扫描电镜对渗层的相结构与形貌进行分析。
- From X-ray photoelectron spectroscopy (XPS) experiments, the presence of Si clusters in the silicon nitride films was confirmed. 对不同富矽量的氮化矽薄膜做了红外和光致发光的比较研究。
- At present, our company mainly produces ceramic balls, ceramic bearings and ceramic rings which are made of silicon nitride, zirconia or alumina. 产品包括陶瓷球、陶瓷轴承、陶瓷刀杯环、陶瓷结构件四大类领域。
- In-situ porous silicon nitride ceramics were prepared directly by the use of silicon dioxide through the carbothermal reduction in nitrogen. 本课题就是利用二氧化硅在氮气中的碳热还原反应，一次原位直接制备氮化硅多孔陶瓷预制体。
