It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily.

 
  • 通常认为高频下制备得到的氮化硅膜呈现张应力;但是通过实验;表明即使应用高频(13.;56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。
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