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- In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究; 并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。
- Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method 无机半导体材料的检验。用红外线干涉法测量硅外延生长层的的厚度
- N type and P type 4"-6"silicon epitaxial wafers. 4"-6"N型和P型各类硅外延片。
- Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
- Standard test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes 用栅控和非栅控二极管的电压-电容关系测定硅外延层中净载流子浓度的标准方法
- n--type silicon epitaxial layers were grown on arsenic-doped n+-type silicon substrate by ultra-high vacuum chemical vapor deposition(UHV/CVD). 利用超高真空化学气相淀积 (UHV/ CVD)设备 ;在掺 As n+ 型 Si衬底上生长了掺 P n- 型 Si外延层 .
- The silicon carbide epitaxial layer may have a thickness and a doping level so as to provide a charge in the silicon carbide epitaxial region based on the surface doping of the blocking layer. 碳化硅外延层可以有一厚度和一掺杂水平使得在阻挡层表面掺杂的基础上提供碳化硅外延区内的电荷。
- The performance of model WB30 is the same as the 1S2209/1S2208 VHF/UHF silicon epitaxial planar tuning diode made by NEC company. 结果表明WB30型VHF/UHF硅电调变容管已与日本NEC公司的VHF/UHF硅外延平面电调变容管1S2209/1S2208的性能相当.;电调变容管的统调特性及其串联电阻直接与电视高频头的增益相关
- Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses. 从CB管脚对微波低噪声NPN晶体管2SC3356施加低电压人体模型(HBM)的ESD应力;发现;随着ESD应力次数的增加;器件的放大特性hFE逐渐退化;并且当电压达到一定水平;多次的ESD可以使器件失效.
- P-type field effect transistor includes a second N-type buried layer and the said P-type epitaxial layer formed in the P-type substrate. 一P型场效晶体管包括有一置于该P型衬底内的一第二N型嵌入层与该P型外延层。
- In this paper,I suggest the integration ?C V? method that is applicable to measuring Si epitaxial layer resistivity of homogeneity with impurity longitudinal distribution. 本文提出了积分C-V法,它适用于杂质纵向分布均匀的外延层电阻率的测量,该方法简便。
- silicon epitaxial planar transistor 硅外延平面晶体管
- Silicon Epitaxial Planar Capacitance Diode 硅外延平面变容二极管
- silicon epitaxial highcurrent switching diode 硅外延大电流开关二极管
- The two structure LDMOS was compared by simulation with MEDICI software. The result is that their breakdown voltage is almost the same and the thin epitaxial layer LDMOS?s Ron is lower. 通过MEDICI模拟对两种器件进行比较,结果为两种器件耐压相当,薄外延LDMOS导通电阻略低。
- low-pressure silicon epitaxial technique 低压硅外延生长技术
- silicon epitaxial planer transistor 硅外延平面晶体管
- Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate. 在半导体器件制造的外延工艺中,外延生长时通常要掺入杂质。
- Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique. 在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。
- SOI material fabricated by using epitaxial layer transfer of porous silicon 多孔硅外延层转移制备SOI材料的研究