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- Design and Experiments of Microplasma Reactor for Scanning Plasma Etching 用于扫描刻蚀加工的微小等离子体反应器的设计和实验
- Keywords MEMS;scanning plasma etching;microplasma reactor;V-I curve; 微机电系统;扫描刻蚀加工;微小等离子体反应器;伏安特性曲线;
- Progress of scanning probe lithography and study on scanning plasma etching technology 扫描探针加工技术的新进展及扫描等离子体加工技术的研究
- scanning plasma etching 扫描等离子体刻蚀
- The reactor is capable of working in the RIE (reactive ion etching) mode and also in the plasma etching mode. 反应腔拥有在RIE(反应离子刻蚀)模式和等离子刻蚀模式下工作的能力。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab-built ECR plasma etching system. 摘要电子迴旋共振(ECR)等离子体以其密度高、工作气压低、均匀性好、参数易于控制等优点在超大规模集成电路工艺中获得了广泛的应用。
- This thesis considers the delamination behaviors between substrate and molding compound for Ball Grid Array (BGA) products caused by the plasma etching process. 中文摘要本文针对阵列锡球封装产品基板和胶饼间所产生的分层作研究。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab built ECR plasma etching system. 电子回旋共振(ECR)等离子体以其密度高、工作气压低、均匀性好、参数易于控制等优点在超大规模集成电路工艺中获得了广泛的应用。
- Application of Baird ICP 2070 sequential scan plasma spectrometer to determine Ag, Al, B, Ba, Be, Cd, Co, Cr, Cu, Hg, Li, Mn, Mo, Ni, P, Pb, Sb, Ti, Tl and Zn in surface water, industrial wastewater, soil, plant and alloy samples. 利用Baird ICP 2070顺序式扫描等离子体光谱仪,对地面水、工业废水、土壤、植物等多种环境样品以及合金中的Ag、Al、As、B、Ba、Be、Cd、Co、Cr、Cu、Hg、Li、Mn、Mo、Ni、P、Pb、Sb、Se、Sn、Ti、Tl、Zn23种元素进行分析测定。
- We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating.The performance is evaluated by measuring the reflectance spectrum and contact angle. 实验上,我们采用全像微影术、电浆蚀刻以及旋镀铁氟龙的方式来制作试片,并量测该试片的反射频谱和接触角。
- Abstract: The characteristics and progress of lithography technique and plasma etching technology are summarized.Their physical mechanisms and current research problems are also explained. 文摘:介绍了光刻与等离子体刻蚀技术的特点与进展,阐述了等离子体刻蚀的物理机制与前沿问题.
- An in-situ particle monitor was installed on a plasma etch tool chamber.This article includes a discussion of two major problems detected on the plasma etch tool within a three-week period. 在等离子体蚀刻工具主舱内安装一个现场粒子监测器,对两个主要问题进行了三周的测试并展开了讨论。
- The Research on Plasma Etching Photoresists 等离子体腐蚀去胶的探讨
- LITHOGRAPHY AND PLASMA ETCHING TECHNOLOGY 光刻与等离子体刻蚀技术
- inductively coupled plasma etching 电感耦合等离子体刻蚀
- radial flow plasma etching reactor 径向两等离子体腐蚀装置
- The doctors gave him an ultrasonic brain scan. 医生给他做了脑部超声波扫描检查。
- The proposed methodologies are applied to detection and classification faults for a particular tool function of a plasma etcher in semiconductor fabrication. 针对所提出的方法,实际应用于半导体制造之电浆蚀刻的机台参数的错误侦测及鑑别,并得之验证。
- The second scan revealed a brain tumor. 第二次扫描显示出一个脑瘤。
- Endpoint Detection in High Density Plasma Etching System 高密度等离子体刻蚀机中的终点检测技术