您要查找的是不是：
- The changing relations between the ground-state energy of the bound polaron in the quantum well and the Coulomb bound potential, the electric field strength, and the well width are derived. 推导出量子阱中束缚极化子的基态能量和库仑束缚势、电场和阱宽的变化关系。
- First, we present systematical results of the as-grown samples of the same indium content but different quantum well widths. 首先，我们针对五个铟含量相同但量子井宽度不同的样品做了有系统性的分析。
- First, we present systematical results of material analysis of five InGaN/GaN quantum well samples of the same indium content but different quantum well widths. 首先，我们针对此五个铟含量相同但量子井宽度不同的氮化铟镓/氮化镓多重量子井结构的样品做了系统性的材料分析。
- quantum well width 量子阱宽度
- The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超辐射器件相比，在相近的输出功率下，器件的光谱宽度从18nm提高到了37nm。
- Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文 种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文 张福厚;宋珂;邢建平;郝修田;曾一平.
- From time-resolved PL (TRPL) measurements, we can see that PL decay times become longer with increasing well width. 从时间解析萤光光谱的实验结果，我们发现萤光光谱的衰减时间会随著量子井厚度增加而变长。
- Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文 王得勇;刘杰;贾金锋;刘洪;薛其坤.
- E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
- New progress of exciton condensation in coupled quantum wells[J]. 引用该论文 闫占彪;郭震宁.
- The numerical results show that the ground-state energy increases with the increase of the electric field strength and the Coulomb bound potential and decreases as the well width increases. 数值计算结果表明，基态能量因电场和库仑束缚势的不同而不同，随电场和库仑束缚势的增大而增大，随阱宽的增大而迅速减小。
- Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文 谭鹏;路洪.
- Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续)：垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
- Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续)：平面雷射：双异质结构，量子井，多重电极，面发射。
- Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面镭射：双异质结构，量子井，多重电极，面发射。
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文 徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
- 今日热词
-
- 深远海浮式风电平台 - deep-sea floating wind power platform
-
- 京雄高速公路 - Beijing-Xiongan expressway
-
- 农业及相关产业增加值 - the added value of agriculture and related industries
