First, we present systematical results of material analysis of five InGaN/GaN quantum well samples of the same indium content but different quantum well widths.

 
  • 首先,我们针对此五个铟含量相同但量子井宽度不同的氮化铟镓/氮化镓多重量子井结构的样品做了系统性的材料分析。
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