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- persistent current memory cell 持续电流存储单元
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- The numerical results of the Kondo temperature and the ground state persistent current of the system are also given under the condition that the Coulomb repulsion is infinite. 并且将它们与一级微扰变分近似所得结果进行了对比 ;指出了它们之间存在的差异 ;对于这一系统二级微扰变分近似将给出更好的数值计算结果 .
- Asia's persistent current account surpluses and undervalued currencies could add to pressures to erect barriers in the US and Europe if things turn bad. 在情况恶化时，亚洲持续的经常账户盈余和货币低估，可能会加大在美国、欧洲遭遇贸易壁垒的压力。
- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- This counter indicates the current memory allocated in bytes on the garbage collection heaps. 此计数器指示在垃圾回收堆上分配的当前内存(以字节为单位)。
- These method can be described below: directly withdraw annex rotates , withdraw annex rotates by ramp ,current memory by using two speed controller. 通过对动态速降的研究,提出了几种解决动态速降的方法,分别是附加速度直接去掉法、附加速度斜率去掉法、用速度环双调节器的电流记忆法。
- Our results show that when the system goes into the strong coupling regime, two parallel dots can be coupled coherently, which leads to an enhanced Kondo effect and a giant persistent current emerging in this system. 研究的结果表明;在这个系统中;当两个量子点处于强耦合时;两个量子点可以相干耦合成一个人造分子;导致一个增强的Kondo效应和超强持续电流的出现.
- The simulation and experiment show that current memory is the best method among those,and nearly has no speed droop during suddenly load_added. 经过仿真和实验比较,发现电流记忆法是最佳的一种方法,用此方法可以基本实现无速降。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- If the US will not run large and persistent current account deficits, countries such as China, and probably Germany and Japan, will not be able to run large and persistent current account surpluses. 如果美国不采取大规律、稳定性流通账户赤字的话，那么诸如中国、或许德国和日本等国，将不能采取大规律、稳定性流通账户盈余。
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 镜像位方案通过把每个比特存储在一个绝缘栅两端的方法在每个存储单元中存储两个比特。
- Based on quantum waveguide theory, the effect of impurities on the transmission probability and the persistent currents in mesoscopic structure is studied. 采用量子波导理论，研究了介观结构中杂质对透射几率和持续电流的影响。
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
- Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同时分析了栅宽与 SNM的关系 ,其结论与实验结果一致 ,并给出了 VDSM SRAM存储单元设计中应注意的问题
