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- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- Physical addresses are used to address memory cells in memory chips. 物理地址是用来真正访问内存单元的地址。
- Unused memory cells following the BELL&RET command are considered free. 在电铃&浸水使柔软指令之后的不用记忆单元是考虑过的免费。
- Flip-flops are a key componemt and memory cells of sequential logic circuit. 触发器是构成时序逻辑电路的存储单元和核心部件。
- One was a technique to lay down polysilicon so that each island of a single crystal is large enough to encompass many memory cells or transistors. 第一种技术是铺陈多晶矽的技术，这项技术使每一个单晶矽岛变得足够大，因而能包含更多的记忆胞或电晶体。
- We have already seen how variables are seen as memory cells that can be accessed using their identifiers. 我们已经看到了，变量是如何被看作可以通过它们的标识符来访问的内存单元的。
- All modern operating systems, including Linux, use this kind of addresses to access the contents of memory cells. 在所有的现代操作系统中，系统都是使用虚地址去访问内存单元的。
- A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. 存储单元阵列包括多个存储单元，每一存储单元具有控制栅和浮动栅。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- A scheme for implementation of a 4 kbit serial ferroelectric nonvolatile memory is proposed, which is composed of 2T 2C memory cells. 文章提出了一个基于 VLSI的 4k位串行铁电不挥发存储器的实现方案。 该电路采用2 T- 2 C的存储单元设计 ,针对铁电电容的读出和写入的电流电压特性设计了相应的读写时序 ,给出了状态机的描述和相应的电路实现。
- The coreceptor CCR5 is expressed predominantly on activated memory cells and CXCR4 is expressed on un-activated phenotype. 第二受体CCR5主要表达在活化的淋巴细胞表面，而CXCR4则主要表达在静息淋巴细胞表面。
- This way, each cell can be easily located in the memory because it has a unique address and all the memory cells follow a successive pattern. 这样，每个单元可以很容易的在内存中定位，因为它有一个唯一的地址，而且所以单元遵循一个连续的模式。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- The isolation trench has sidewalls and upper and lower portions, and encircles an area of the semiconductor body which contains the memory cells. 隔离沟槽具有侧壁及上和下部，并包围包含存储单元的半导体本体的区域。
- The terrible scene was engraved on his memory. 那可怕的情景铭记在他的记忆里。
- Selecting circuits for columns of an array of memory cells are used to hold read data or write data of the memory cells. 用于存储单元的一个阵列的各列的选择电路，用来保持该存储单元的读出或写入数据。
- The memory of your computer can be imagined as a succession of memory cells, each one of the minimal size that computers manage (one byte). 你的计算机的内存可以想象成是一些连续的内存单元，每一个单元大小是计算机所处理的最小的大小（1字节）。
