您要查找的是不是：
- FSG, as one kind of low k dielectric film, is very similar with SiO2 in structure and deposition, and can be well used in 0.18-0.13um ULSL. 氟掺杂的氧化硅玻璃（FSG）作为低介电常数材料的一种，它的制备工艺、结构和性能更接近二氧化硅，足以满足0.;18微米甚至0
- This paper introduces basic technology of copper interconnect, including single and dual damascene technology, CMP technology, low k dielectric materials, barrier materials and reliability of copper interconnect. 文中介绍了基本的铜互连布线技术 ,包括单、双镶嵌工艺 ,CMP工艺 ,低介电常数材料和阻挡层材料 ,及铜互连布线的可靠性问题
- The synthesis, structure, properties and process interaction of low k dielectrics are reviewed.Characterization techniques for low k dielectric films are summarized. 综述了低介电常数介质薄膜的制备方法、结构与性能表徵、工艺兼容性等领域的最新进展。
- low k dielectric layer 低k介质埋层
- P. S. Ho, Low k Dielectrics For Submicron Interconnect Applications, Low k tutorial Taiwan, May, 2000 苏子渊;“含有不同烷基团大小之聚醯亚胺与氟化聚醯亚胺的基本性质研究”;中原大学化学工程学系硕士论文;p.;9-16;2000
- High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation. 使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .
- The equivalent oxide thickness (EOT) of an HfO_2 high k dielectric is extracted in two steps. 分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).
- The material, utilized as high- k dielectric, contains hafnium, there is no other information about it. 这些材料，利用高k电介质，包含铪，没有任何其他信息。
- A key problem in chip fabrication is that the new polish method for electromigration and ultra-low K dielectric and Cu electroplating level. 电迁移问题和集成超低k电介质材料与Cu镀层的新抛光方法是芯片制造中的一个关键问题。
- Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer. 在闸极与高介电常数介电层间使用氮化矽可有效抑制负偏压温度不稳定性的现象。
- Low dielectric constant (low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance (RC) delay, power consumption and cross talk of ULSI. 摘要用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- Low dielectric constant(low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance(RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- Abstract: Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 摘要: 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- Second,an approach using flat-band capacitance is demonstrated for extracting the EOT of a high k dielectric,without the effects of inversion or accumulation capacitance. 其次;给出了一种利用平带电容提取高k介质EOT的方法;该方法能克服量子效应所产生的反型层或积累层电容的影响.
- And exceed medium of the copper between low K metal (interrelate) promise to reduce interrelating electric capacity. 而且超低k金属间铜介质(互连)答应降低互连的电容。
- Granulite in Jinshuikou defferent with other granulites on low K、Na,unconspicuouly negative of Rb. 2． 金水口麻粒岩以低K、Na含量，没有明显的Rb亏损不同于其它麻粒岩。
- The calculation result shows that the possible SI mechanism (i. e. , the competition between the n - p interaction and the coriolis force in low K space) is also appropriate for odd-odd nuclei in the A = 100 region. 计算结果表明,可能的旋称反转机制(即:低K空间n-p相互作用和科氏力的相互竞争),对于A=100质量区奇奇核也是适用的。
- The government is trying to keep a low profile on this issue. 政府力图在这个问题上保持低姿态。
- The singer forced his low notes. 那位歌手勉强唱出低音。
