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- high k gate dielectrics 高k栅介质
- Fabrication and Investigation of High K Gate Dielectric Materials for Next Generation MOSFET Applications 应用于下一代MOSFET中的高介电栅介质材料的研究
- high k gate dielectric 高介电常数栅介质
- Keywords SiGe;Silicon-On-Insulator （SOI）;SiGe-On-Insulator（SGOI）;stained Si;high K gate dielectric;plasma immersion ion implantation &deposition （PIII&D）;self heating effect; 绝缘体上的硅（SOI）;绝缘体上的锗硅（SGOI）;应变硅;高K栅介质;等离子浸没式离子注入;自加热效应;
- For continued technology scaling, high k materials are required to replace SiO_2 as gate dielectric in the next generation metal oxide field effect transistors (MOSFET). 在过去二十多年里,Si基元器件的大小遵循Moore定律按比例的持续减小。 对于下一代金属氧化物半导体场效应管(MOSFET)器件,原来的栅极介电材料SiO_2已经不再适合使用。
- high - k gate dielectrics 高k介质
- Keywords High k materials;Gate dielectric;Molecular beam epitaxy;HfO_2;Er_2O_3; 高k材料;栅介质;分子束外延;二氧化铪;三氧化二饵;
- Intel's new design uses what is known as high K metal gate technology. But IBM made a similar announcement on the same day as Intel. 英特尔的新设计使用的是大家所知道的“高K金属门”技术。但是，IBM公司也在同一天作了类似的宣布。
- NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer. 在闸极与高介电常数介电层间使用氮化矽可有效抑制负偏压温度不稳定性的现象。
- From the band offset viewpoint, those obtained numbers indicate that Er2O3 could be a promising candidate for high-k gate dielectrics. 仅从这一角度来看，Er2O3相对于Si由于其比较大而且对称的价带和导带偏移而可能成为一种很有应用前景的高k栅介质材料。
- Chapter 5 is related to 2D device physics, we discuss FIBL(fringing-induced barrier lowering) in subthreshold region with various gate dielectrics, sidewalls, and drain voltages. 第五章探讨二维的元件物理特性，讨论不同闸极介电层、边墙材料、和汲极偏压下，次临界区域的边缘引发位障下降现象。
- High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation. 使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .
- The equivalent oxide thickness (EOT) of an HfO_2 high k dielectric is extracted in two steps. 分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).
- A high K ratio method for fatigue precracking in welding position toughness specimen of thick steel plate was developed. 提出了预制厚钢板焊缝断裂韧度试样疲劳裂纹的“高K比法”。
- The result shows that N/O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT,which also indicates that N/O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do. 结果表明 ;Si3N4 / Si O2 叠层栅介质比同样 EOT的纯 Si O2 栅介质有更长的寿命 ;这说明 Si3N4 / Si O2 叠层栅介质有更高的可靠性 .
- VoL-canic rocks and subvolcanic rocks related with metallogenesis are characteristic of rich Si,poor Fe,high K and low Na. 与成矿有关的火山岩、次火山岩具有富硅、贫铁、高钾、低钠特点。
- The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime. 结果表明 ;同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ;前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 .
- Results show that HfO 2 gate dielectric hold good electrical characteristics. 实验结果显示 :Hf O2 栅介质电容具有良好的 C-V特性 ,较低的漏电流和较高的击穿电压。
- The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二维模拟软件Medici对以ZrO:为栅介质的体硅MOS器件和501 MOS器件的性能进行了模拟。 系统模拟了以ZrO:为栅介质的体硅MOS器件和常规MOS器件性能对比，以及ZrO:为栅介质的501 MOS器件的性能与常规501 MOS器件性能的对比。
- Second,an approach using flat-band capacitance is demonstrated for extracting the EOT of a high k dielectric,without the effects of inversion or accumulation capacitance. 其次;给出了一种利用平带电容提取高k介质EOT的方法;该方法能克服量子效应所产生的反型层或积累层电容的影响.
