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- The effects of composition of etchant, etching temperature and etching time on etching rate are also investigated. 通过研究刻蚀剂组份、刻蚀时间、刻蚀温度对刻蚀速率的影响,可提供合适的刻蚀剥层方案。
- The first passivation layer has a first etching rate with respect to an etching agent. 第一钝化层具有与蚀刻剂相关的第一蚀刻率。
- However, the relation between the etching rate and laser fluence appears nonlinearly. 在高雷射能量密度时则为一极平坦的连续表面。
- During copper etching,the cuprous ion concentration in the etchant would increase which causes an etching rate reduction. 随着蚀铜过程的进行,蚀铜液中的一价铜离子浓度不断增加,造成蚀铜液的蚀铜能力下降。
- It is shown that the bulk etching rate as a function of etching temperature can be described by Arrhenius equation Vb=ae-E/KT. 研究结果表明;体蚀刻速度与蚀刻温度遵守Arr-henius方程V_b=a·e~(-E/KT);其中;体激活能E=0.;66±0。
- Then the excimer laser etching on polymethyl methacrylate (PMMA) plate mechanism is studied, with the etching rate curves listing by experiments. 研究了准分子激光对聚甲基丙烯酸甲脂(PMMA)基片的刻蚀机制，获得了刻蚀曲线。
- The relation between etching rate, sidewall roughness and RF power and Oxygen rate is deeply investigated by implementing careful research on RIE. 在RIE中，离子轰击的作用，会在波导侧壁形成起伏结构，增加了器件的散射损耗。
- More often, all of the materials exposed to the etchant have a finite etch rate. 通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。
- The second passivation layer has a second etching rate that is higher than the first etching rate with respect to the etching agent. 第二钝化层具有与蚀刻剂相关且高于第一蚀刻率的第二蚀刻率。
- The water contact angle, etching rate and surface morphology analysis were used to characterize the cleaning effect after the plasma clean process. 藉由水滴角度、蚀刻速率、表面状态来研究电浆清洗的效应。
- Through comparing the indicators for estimating the process localization,a new concept of localized etching rate(LER) is presented for evaluating stray etching. 通过对定域性评价指标的比较,提出了以定域蚀除率评价杂散蚀除的新概念。
- During the process of copper etching, the concentration of cuprous ion gradually builds up in the etchant, resulting in the reduction of copper etching rate. 随著蚀铜过程的进行，蚀铜液中的一价铜离子浓度不断增加，造成蚀铜液的蚀铜能力下降。
- Etch rate and selectivity are examined as a function of SF6, flow, O2 flow, CHF3 flow, pressure and the RF power in order to optimize etching condition. 为了优化刻蚀条件，将刻蚀速率和选择比表示为SF6、O2、CHF3各自的流最以及气压和射频功率的函数。
- It is a common way to alter the etching rate by changing the material of sacrificial layer, concentration of etchant, temperature or structure of sacrificial layer. 通过改变牺牲层材料、腐蚀液浓度、温度和牺牲层结构来改变腐蚀速率是常用的方法。
- A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously. 根据同时求解的中性通量、表面化学覆盖和表面材料类型便可计算出局部刻蚀速率和局部堆积速率。
- In MEMS fabrications for devices and systems, inductively coupled plasma (ICP) etching is a popular technology owing to its convenient operation, excellent anisotropy, high etch rate and low cost. 在MEMS器件及系统的制造中,电感耦合等离子体(ICP)对硅片的刻蚀工艺由于具备操作简单、各向异性性能好、刻蚀速率快、成本低等特点,是目前实现高深宽比结构制造的主流工艺。
- Mimiwaty, M. N., Badarich, B., "The Effects of Temperture and KOH Concentration on Silicon Etching Rate and Membrane Surface Roughness, "IEEE and Burhanuddin Yeop Majlis, pp.524-528 (2002). 黄尧民，"光纤式悬臂梁结构微型压力感测器"，私立中原大学，硕士论文，民国九十二年。
- At this rate we won't be able to afford a holiday. 照这样下去，我们不会有时间／钱去度假的。
- Such systems, limited to low-pressure operation where etch rates are low, have yielded highly anisotropic features in GaAs films. 在低压、低刻蚀速度时，这种方法可制出高度各向异性的砷化镓薄膜。
- The electronics industry uses it in plasma and thermal cleaning applications for its advantages such as high etch rates, high selectivity, carbon-free etching, and minimal residual contamination. 由于它的优点，如高蚀刻率、高选择性、无碳蚀刻和最小限度的残留污染，电子工业把它用在等离子和热清洁应用中。
