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- The copper interconnect technology for ICs and their applications are introduced briefly. 简要介绍了集成电路铜连线技术及其应用.
- In many issues of the reliability of copper interconnection, we place the emphasis on electromigration and stress migration. 在铜互连可靠性的几个主要问题中，重点针对互连中的电迁徙和应力迁徙进行了探讨。
- The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented. 简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
- Recently, copper electroplating also becomes an important process step for IC device manufacture due to the requirement of Dual Damascene process of copper interconnection. 近日来，对IC元件制造而言，由于金属铜内连接双镶嵌制程的需求，电镀铜也已经变成一项重要制程步骤。
- Existing work in the copper interconnection focuses mainly on some copper alloys, such as Cu-Mg、Cu-Al、Cu-B、Cu-Ta, but most of them can only be used under normal temperatures. 目前研究得最多的是各种铜合金，如Cu-Mg、Cu-Al、Cu-B、Cu-Ta，但是这些铜合金互联线一般只能应用于常温。
- Aiming at the technology demand of advanced copper interconnection,the effect of pulse current density on Cu layer properties such as resistance,crystal size and surface roughness were investigated. 针对先进纳米铜互连技术的要求,研究了脉冲电流密度对铜互连线电阻率、晶粒尺寸和表面粗糙度等性能的影响。
- This paper introduces basic technology of copper interconnect, including single and dual damascene technology, CMP technology, low k dielectric materials, barrier materials and reliability of copper interconnect. 文中介绍了基本的铜互连布线技术 ,包括单、双镶嵌工艺 ,CMP工艺 ,低介电常数材料和阻挡层材料 ,及铜互连布线的可靠性问题
- Aiming at the technology demand of advanced copper interconnect, the effect of current density on Cu layer properties such as resistance, crystal size and surface roughness were investigated. 针对先进纳米集成电路铜互连技术的要求，本文研究了脉冲电流密度对铜互连线电阻率、晶粒尺寸和表面粗糙度等性能的影响。
- CMP Slurry of Copper Interconnection for ULSI ULSI铜互连线CMP抛光液的研制
- Damascene copper interconnection 大马士革铜互连线
- Many analysts already predict that the copper interconnects that supplanted aluminum in the 1990s will themselves have to get replaced. 很多分析师已经预计说，1990年代取代铝质连接线的铜质连接线将被新的连接模式所取代。
- In the experiments, copper interconnects, a thick integrated circuit samples, is reconstructed and modeled successfully. 实验中对集成电路厚样品铜连线进行了电子断层成像，并用渲染方法有效重现样品结构。
- Wong, S. S., Ryu, C., Lee, H., and Kwon, K. W., “Barriers for Copper Interconnections,”Material Research Society Symposium Proceedings, Vol. 514, pp. 75-81, 1998. 郑俊麟，“探讨半导体金属化制程之金属钽薄膜的沉积与化学添加剂对铜沉积之影响”，硕士论文，私立中原大学化学工程研究所，桃园，第9-10页，2002。
- From the specimen’s tomography and reconstruction results, a void between the copper interconnects is clearly revealed that cannt be observed in the projection images directly. 从样品断层成像和三维模型中可以清晰看到铜连线之间通孔处存在空洞，这一现象将严重影响电路的正常工作。而在样品的电镜投影像中是观察不到这一现象的。
- It's strange how people's lives interconnect. 人们的生活是如何互相联系在一起的，真是不可思议。
- The chemical symbol for copper is "Cu". 铜的化学符号是Cu。
- What color is copper sulphate solution? 硫酸铜溶液是什么颜色？
- The influence of accelerator,suppressor and leveler on copper deposits of pulse electroplating applied in copper interconnecting technique as well as their working principle were studied. 针对集成电路电镀铜技术,研究了三种有机添加剂(加速剂、抑制剂和平整剂)对铜互连线脉冲电镀的影响及其机制。
- Copper and gold are both metals. 铜和金都是金属。
- Copper has less resistance than lead. 铜的电阻比铅的小。
