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- Chemical mechanism of exotic weed invasion. 外来杂草入侵的化学机制
- Chemical Mechanical Polishing (CMP) is the most effective way to achieve global planarization in semiconductor process. 化学机械抛光，是半导体制程中达到全域平坦化最有效的办法，同时也是众多制程中不可或缺的重要制程步骤。
- Chemical mechanical polishing (CMP) is the mostly used planarization process in the semiconductor industry today. 摘要:化学机械抛光是现在半导体产业中最常被使用的平坦化制程。
- Bachelor degree in Mechanical engineer or equivalent, preferred education background in Welding, Chemical Mechanical, NDT, Power Equipments, etc. 本科以上学历,机械背景,焊接,化工机械,无损检测,动力设备专业优先。
- Diamond disk conditioners have long served the semiconductor chemical mechanical polishing (CMP) process for polish pad dressing. 摘要钻石修整器应用于化学机械抛光中抛光垫的修整，已有很长的一段时间。
- Chemical mechanical polishing (CMP) is the most effective method to achieve global planarization in semiconductor industry. 化学机械抛光，是目前半导体制程中达全域平坦化最有效的方式，同时也是许多制程中不可缺少的步骤。
- Boning, D., W. Moyne and T. Smith, “Run by Run Control of Chemical Mechanical Polishing,” IEEE Trans. CPMT (C), 19, 307-314 (1996). 周育乐，考虑制程使用时间之批次控制方法，台湾大学工业工程研究所硕士论文，台北，台湾(2000)。
- G. Corlett, “Targeting Water Use for Chemical Mechanical Polishing,” Solid State Technology, Vol. 43, No. 6, pp. 201-206 (2000). 蔡明莳，“化学机械研磨后清洗技术简介”，奈米通讯，第6卷，第1期，第21-27页（1999）。
- Both high material removal rate(MRR) and smooth surface have to be achieved in primary chemical mechanical polishing(CMP) of hard disk substrates. 硬盘盘基片粗抛光必须在较高材料去除率的基础上获得高表面质量。
- With compensation-oriented chemical mechanical polishing (CMP) as the carrier, the study elucidates the procedures of this method for the innovative research and development case. 以补偿式化学机械抛光为载具，作为进行创新研发之案例来阐述本方法之流程步骤。
- Chemical mechanical polishing (CMP) technology has been considered as the most effective local and global planarization technology for wafer and widely used in ULSI fabrication. 化学机械抛光(CMP)是目前唯一能够实现硅片局部和全局平坦化的实用技术和核心技术，正广泛地应用于IC制造中。
- Slurry flow weighs heavily on the performances of chemical mechanical polishing(CMP) process,wherein the pad surface will alter the flow features considerably. 抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。
- By considering the effect of the soft layer and the deformation of the abrasive particles on the material removal in chemical mechanical polishing(CMP),the solid-solid contact mode of CMP was modified. 通过分析软质层的形成、作用以及纳米磨料的自身变形对材料去除的影响,改进了CMP过程的接触力学模型;
- This technology-marketing report examines and projects the technologies involved in the planarization of semiconductor layers.The emphasis is on Chemical Mechanical Polishing (CMP). 报告研究了半导体层的抛光技术，技术的发展趋势以及产品，产品应用，并介绍了材料和设备供应商。
- The researchers adopted polishing technology used in the semiconductor industry (chemical mechanical planarization) to polish the surface of human teeth down to nanoscale roughness. 研究人员采用了半导体工业中的抛光技术（化学机械研磨）来抛光人类牙齿表面以获得纳米级的表面粗糙度。
- Chemical mechanical polishing (CMP) is the most effective method to achieve global planarization in semiconductor industry.The polishing pad is one of the primary consumables in CMP. 摘要:化学机械抛光，是目前半导体制程中达全域平坦化最有效的方式，同时也是许多制程中不可缺少的步骤。
- The effect on IHT and appliance in training physiological and biologic chemical mechanism has been summarized, in order to apply on training further in the future. 摘要从间歇性低氧训练的产生及其在运动训练中的应用和生理、生化机制等方面进行综述，旨在促进间歇性低氧训练在运动训练中进一步应用。
- The main chemical mechanism of the adsorption was the formation of double hydrogen bands between AFB_1 and montmorillonite or modified montmorillonite. 说明蒙脱石和改性蒙脱石对AFB_1存在化学吸附，其选择性吸附机制可能主要是由于它们边缘的羟基与AFB_1之间形成了双氢键。
- The physical and chemical mechanism of propellant / liner interface debonding failure is one of the most important part of the rocket engine failure. 推进剂/衬层界面脱粘失效的物理、化学机理研究是火箭发动机装药失效机理研究的重要部分之一。
- A reactor is a container for chemical reaction. 反应器是进行化学反应的容器。
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