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- buried channel mos 埋沟金属氧化物半导体
- In this thesis we first fabricated a device which has the basic MOS structure and we embedded Ge nanocrystal in the oxide. 本论文中我们先制做一个基本的金属-氧化物-半导体结构的发光元件之后制作具有锗奈米粒子于氧化层的金属-氧化层-半导体结构的发光元件。
- This paper chooses BSIM3 (Berkeley short-channel IGFET model) the model to be extracted, which is for short channel MOS Field Effect transistor specially. 本论文选取目前业界占主流地位的BSIM3(Berkeley short-channel IGFET model)为将要提取的模型,它是专门为短沟道MOS场效应晶体管而开发的一种模型。
- Bucket brigade device (BBD) is usually used as analogue shift register with MOS structure, which can provide an accurate delay fur the analogue signal. 摘要BBD器件是一种MOS结构的电荷模拟移位寄存器,它可以完成对模拟信号的精确延迟。
- Bucket brigade device(BBD) is usually used as analogue shift register with MOS structure, which can provide an accurate delay for the analogue signal. BBD器件是一种MOS结构的电荷模拟移位寄存器,它可以完成对模拟信号的精确延迟。
- By comparing the MOS structure's responses to hot-carrier injection and total dose radiation,the correlation between them is investigated. 通过对MOS电容进行热载子注入和总剂量辐照实验,探讨了MOS结构热载子注入与总剂量辐射响应的相关性。
- It successfully predicts the threshold voltages of buried channel MOSFET"s with a large range of channel lengths.Also, the reducing substrate bias effects in deep-submicron devices are included. 模型反应了较宽沟长范围内埋沟MOSFET的开启电压与沟长及偏置的关系,并预测了在深亚微米下衬偏效应随沟长减小而减小的特性。
- p type channel MOS intergrated circuit p沟MOS集成电路
- Design of Operation Mode of Buried Channel CCD 埋沟CCD器件工作状态的设计
- p type channel MOS integrated circuit p沟MOS集成电路
- double level polysilicon mos structure 双层多晶硅金属氧化物半导体结构
- However, most analytical models existing today do not consider this problem, thus fail to distinguish between the active, bipolar, and MOS structures. 然而,目前已有的分析模型几乎都不考虑这个问题,因此无法分辨活动性,双载子电晶体,和金氧半导体(MOS)之间的不同。
- Progrorss of Study on MOS Structure Dose Detector MOS结构剂量探测器研究进展
- He was sitting with his head buried in a book. 他坐着埋头看书。
- Your letter got buried under a pile of papers. 你的信压在一堆文件下面了。
- It can be expected that the acts of fluorine on the interface of Si/SiO2 and in the SiO2 film are responsible to the radiation effects of MOS structures and depend on the technology of F implantation. 可以预测,F在Si/SiO_2界面附近和SiO_2中的行为直接与MOS结构的辐射响应相对应,而F的行为依赖于注F工艺条件。
- The lorry was destroyed by a buried mine. 卡车被一枚埋在地下的地雷炸毁。
- Influence of Irradiation on Oxide Film Reliability in MOS Structure 辐照对MOS结构氧化硅薄膜可靠性的影响
- Those dead soldiers were buried in the tombs. 那些死去的战士被埋葬在坟墓里。
- Both his grandparents were buried here. 他的祖父母都葬在这里。
- 今日热词
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- 深远海浮式风电平台 - deep-sea floating wind power platform
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- 京雄高速公路 - Beijing-Xiongan expressway
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- 农业及相关产业增加值 - the added value of agriculture and related industries