It can be expected that the acts of fluorine on the interface of Si/SiO2 and in the SiO2 film are responsible to the radiation effects of MOS structures and depend on the technology of F implantation.

• 可以预测,F在Si/SiO_2界面附近和SiO_2中的行为直接与MOS结构的辐射响应相对应,而F的行为依赖于注F工艺条件。