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- bipolar transistor spike 双极晶体管尖峰信号
- In a bipolar transistor, the control area or the electrical connection to the control area. 在双极晶体管中,指控制区域或和控制区相连的导电连接。
- The ionizing radiation responses of NPN bipolar transistor and NMOSFET at different dose-rates have been investigated. 摘要研究了NPN双极晶体管和NMOSFET在不同剂量率环境下的电离辐照效应。
- With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction. 就双极型晶体管而言,其门电流等于或超过必要的值,使发射极集电极充分导通的一种状态。
- Mixing-signal stimulation method can enhance dissipation of bipolar transistor evidently, especially first cascade amplifying circuits. 理论分析和实践结果都表明，本文所提出的方法能有效地改善有源低热器件的红外热图像。
- This paper presents a novel hybrid circuit breaker (HCB) device whose motion part is composed of Insulated Gate Bipolar Transistor (IGBT) and Mechanical Circuit Breaker (MCB). 摘要将机械开关的静态特性和固态开关的快速性相结合研制了一种新型混合式断路器装置。
- An insulated gate bipolar transistor (IGBT) device characterization tool allows users to quickly and accurately create average and dynamic models of power semiconductor devices. 绝缘栅双极晶体管（IGBT）器件描述工具，使用户可以快速准确地创建功率半导体器件的平均和动态模型。
- In the 1960s the IC market was broadly on bipolar transistors. 六十年代集成电路市场主要为双极型晶体管。
- The recent development of pulse modulator is to use solid-state switches such as IGBT (Insulated Gate Bipolar Transistor ) and power MOSFET(Metal Oxide Semiconductor Field Effect Transistor)etc. as substitute for hydrogen thyratrons. 用IGBT(绝缘栅双极性晶体管)和功率MOSFET(金属氧化物半导体场效应管)等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。
- This device consists of a n-channel depletion mode MOS transistor,a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。 它具有“双负阻”特性和正阻区阻值易于控制等特点。
- InP/GaAs 0.5 Sb 0.5 /InP DHBT (double heterojunction bipolar transistor) is grown by MOCVD (metalorganic chemical vapor deposition). The influence of material quality on device performance is studied. 采用金属有机化学气相沉积生长了 In P/ Ga As0 .;5Sb0
- Analysis indicates the potentialities that the new device would show significantly higher power than that of a bipolar transistor and a FET at the microwave frenquencies, and have a rather wider frequency band. 分析表明这种新器件在微波频率下具有远高于双极型晶体管和场效应晶体管的功率潜力;并可得到较宽的带宽.
- Parameter calculations of rectification, filter, inverter, driving circuits of Insulated-Gate Bipolar Transistor (IGBT), and peripheral circuits are discussed in the design of main circuit. 主电路部分给出了整流、滤波、逆变器、IGBT驱动电路的外围器件各个环节的参数的计算。
- bidirectional bipolar transistor 双向双极晶体管
- insulated gate bipolar transistor 绝缘的双级晶体管
- equivalent circuit of bipolar transistor 双极晶体管等效电路
- switching time of bipolar transistor 双极晶体管开关时间
- A New Bipolar Transistor Current Circuit 一种双极型基本电流镜的改进电路
- IGBT Insulated Gate Bipolar Transistor 绝缘栅双极晶体管
- In this paper, a novel negative-differential-resistance (NDR) device composed of three heterojunction bipolar transistors (HBT) is investigated. 摘要: 本篇文章所介绍的负微分电阻元件(negative-differential-resistance；
