InP/GaAs 0.5 Sb 0.5 /InP DHBT (double heterojunction bipolar transistor) is grown by MOCVD (metalorganic chemical vapor deposition). The influence of material quality on device performance is studied.

 
  • 采用金属有机化学气相沉积生长了 In P/ Ga As0 .;5Sb0
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