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- The dynamics of thermal reaction of Ge(111) surface with chlorine molecules has been studied using molecular beam relaxation spectrometry (MBRS). 本文用分子束弛豫譜研究了Ge(111)表面與氯分子熱反應動態學。
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附係數.;紅外與毫米波學報);
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我將介紹分子束磊晶技術（ MBE ）的發明經過、現況、和將來的發展。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 驚詫於這樣的人還不是中國的院士，實在很煩。
- To narrow the molecular beam (water group), adjusting the molecular structure of volatility. 縮小分子束(水分子集團)，調整分子結構波動。
- Crossed molecular beam studies of reaction dynamics 尤其是利用交叉分子束研究反應動力學
- Reaction Dynamics via Molecular Beam and Laser 分子束和激光束反應動態學
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法製成了具有Au/ZnSe:Mn/n-Ge結構的電致發光單晶膜,最低起亮電壓為6V。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生長BaTiO3(BTO)鐵電薄膜。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技術在半絕緣GaAs襯底上生長製備了不同結構的AlAs/GaAs/InGaAs兩壘一阱RTD單管.
- Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用電感耦合等離子體(ICP)裝置對分子束外延(MBE)法在Sapphire襯底上生長的Zn1-xMgxO薄膜的Mg組分進行了測試.
- O-chlorophenol/water mixed clusters were studied using both laser multiphoton ionization mass spectrum and supersonic pulsed molecular beam technique. 應用激光多光子電離質譜與超聲脈衝分子束技術研究鄰氯苯酚-水的混合團簇。
- Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最後我們使用固態分子束磊晶器，以砷化銦/砷化鎵量子點作為活性層，磷化銦鎵作為被覆層製作半導體雷射並量測其特性。
- Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生長出多種鈣鈦礦氧化物薄膜和異質結。
- Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control. 分子束外延（Molecular beam epitaxy, MBE）是一種在超高真空條件下，使分子或原子按晶體排列一層層地「長」在基片上形成薄膜的技術。
- Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community. 瑞博是一個製造分子束外延設備的公司，其設備在化合物半導體領域處於領先地位。
- The distribution of atomic or subatomic particles in a system, as in a magnetically resolved molecular beam, arranged in order of masses. 能譜：系統（如經磁力分解的分子束）中，原子與亞原子微粒根據質量順序排定的分佈
- The microstructure of BaTiO 3 (BTO)/ SrTiO 3 (STO) superlattice grown on (001)SrTiO 3 substrate by laser molecular beam epitaxy (L MBE) was investigated. 本實驗研究利用激光分子束外延法 (L%25DMBE)研究在SrTiO3(STO) (0 0 1)基片上生長的BaTiO3(BTO) /SrTiO3(STO)超晶格的微結構 .
- The characteristics of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) with different growth temperature of GaAs spacer or growth rates were studied. 本篇論文探討分子束磊晶成長砷化銦/砷化鎵量子點的特性隨著不同砷化鎵空間層的成長溫度或成長速率的變化。
- Especially, laser molecular beam epitaxy (L-MBE) plays an important role in the preparing of high quality nanometer thin films and in layer by layer growth of superlattice. 指出脈衝激光沉積技術在探討激光與物質相互作用和薄膜成膜機理方面的作用，尤其是激光分子束外延技術在高質量的納米薄膜和超晶格人工設計薄膜的製備上顯現出的巨大潛力。
