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- A transistor memory cell can be made with any number of terminals. 晶體管存貯單元端點的數量是不受限制的。
- Characterize standard logic cells and memory cells. 提取標準邏輯單元和存儲電路的參數。
- The memory cells may be multistate memory cells. 該存儲單元可以是多狀態存儲單元。
- The approach effectively reduces the influence of peripheral background intensities texture on the extraction of a cell region. 提出的方法結合了前人方法的優點,能有效降低周圍背景灰度和細胞區域紋理對對分割結果的影響。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不穩定的內存單元已將70(二進位為1000110)更改為6(二進位為000110),則會發生此問題。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通過實驗研究了閃速存儲器存儲單元中應力誘生漏電流(ILC)產生機理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在該程序中利用8237實現了將內存中魔幾個單元的數據複製到另外幾個存儲單元。
- US Patern No. 5834806, 1998, 「Raised-Bitline, Contactless, Trenched, Flash Memory Cell」, by R.L. Lin, C.H.-H Hsu, M.S. Liang. 「極快速擬動態非揮發性快閃記憶體之陣列結構與其執行編碼時臨界電壓自我校正方法」;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 鏡像位方案通過把每個比特存儲在一個絕緣柵兩端的方法在每個存儲單元中存儲兩個比特。
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子計算機存儲單元的相干脫散,破壞量子態中的信息,是量子計算機難以實現的主要原因之一。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 設計者常常要在靈敏放大器的面積、功耗以及讀數據的速度之間折衷考慮。
- Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同時分析了柵寬與 SNM的關係 ,其結論與實驗結果一致 ,並給出了 VDSM SRAM存儲單元設計中應注意的問題
- Based on the unified ferroelectric device model which is applied practically to the design, the 2T 2C configuration of the ferroelectric DRO memory cell is discussed in detail. 基於被應用於實際設計之中的統一的鐵電器件模型,詳細討論了2T?2C組態的鐵電破壞性讀出存儲器單元的設計。
- Physical addresses are used to address memory cells in memory chips. 物理地址是用來真正訪問內存單元的地址。
- Unused memory cells following the BELL&RET command are considered free. 在電鈴&浸水使柔軟指令之後的不用記憶單元是考慮過的免費。
- Flip-flops are a key componemt and memory cells of sequential logic circuit. 觸發器是構成時序邏輯電路的存儲單元和核心部件。
- Also there is a tool called RC Physical, it can take the netlist and DEF which is from the floorplan and memory cell placement, and it can optimize the timing for the netlist. 現在要用這個工具,我孤陋寡聞,從沒聽說過這個工具,哪位知道的,能不能介紹一下,萬分感謝!
- The terrible scene was engraved on his memory. 那可怕的情景銘記在他的記憶里。
- A storage cell in some amorphous memory devices. 某些非晶體存儲器中的一個存儲單元。
- A memory cell array includes a plurality of memory cells each of which has a control gate and a floating gate. 存儲單元陣列包括多個存儲單元,每一存儲單元具有控制柵和浮動柵。