您要查找的是不是：
- A transistor memory cell can be made with any number of terminals. 晶體管存貯單元端點的數量是不受限制的。
- Characterize standard logic cells and memory cells. 提取標準邏輯單元和存儲電路的參數。
- The memory cells may be multistate memory cells. 該存儲單元可以是多狀態存儲單元。
- The upper layer forms an open cell matrix when exposed to a jet fire to permit passage of gasses from the lower layer to ambient. 上層當暴露於噴射火焰時形成開孔基體，使得氣體能經下層通到環境中。
- The amyloplast envelope began to degrade and released starch granules into cell matrix when amyloplast was full of starch granules. 當澱粉體被澱粉粒所充滿，澱粉體被膜降解消失，釋放澱粉粒到細胞基質中。
- Osteopontin is a member of the small integrin-binding glycoprotein family and it mediates varied kinds of biological behaviors as an extra cell matrix. 骨橋蛋白是整合素結合糖蛋白家族成員,作為一種細胞外基質介導多種生物學的行為。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不穩定的內存單元已將70(二進位為1000110)更改為6(二進位為000110),則會發生此問題。
- The intervertebral disc degeneration is displayed by the changes of the cell proliferation and the cell matrix's metabolism, which includes collagen and proteoglycan. 摘要椎間盤退行性病變表現為細胞數量和細胞基質代謝如膠原、蛋白聚糖等代謝的改變。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通過實驗研究了閃速存儲器存儲單元中應力誘生漏電流(ILC)產生機理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在該程序中利用8237實現了將內存中魔幾個單元的數據複製到另外幾個存儲單元。
- US Patern No. 5834806, 1998, 「Raised-Bitline, Contactless, Trenched, Flash Memory Cell」, by R.L. Lin, C.H.-H Hsu, M.S. Liang. 「極快速擬動態非揮發性快閃記憶體之陣列結構與其執行編碼時臨界電壓自我校正方法」;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 鏡像位方案通過把每個比特存儲在一個絕緣柵兩端的方法在每個存儲單元中存儲兩個比特。
- This paper implements the pattern-driven motif finding algorithm on Cell Matrix by firstly designing the basic comparing unit and then hierarchically constructing the higher subsequence test unit and the architecture for processing one entire sequence. 基於CellMatrix結構;本文首先在晶格結構上設計基本字元比較單元;而後在此基礎上逐層構建更高層次的子序列測試單元和單條序列處理架構;從而實現了基於模式驅動的模體發現演算法.
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子計算機存儲單元的相干脫散，破壞量子態中的信息，是量子計算機難以實現的主要原因之一。
- Physical addresses are used to address memory cells in memory chips. 物理地址是用來真正訪問內存單元的地址。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 設計者常常要在靈敏放大器的面積、功耗以及讀數據的速度之間折衷考慮。
- Unused memory cells following the BELL&RET command are considered free. 在電鈴&浸水使柔軟指令之後的不用記憶單元是考慮過的免費。
- Flip-flops are a key componemt and memory cells of sequential logic circuit. 觸發器是構成時序邏輯電路的存儲單元和核心部件。
- Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同時分析了柵寬與 SNM的關係 ,其結論與實驗結果一致 ,並給出了 VDSM SRAM存儲單元設計中應注意的問題
